EUV RESIST ETCH DURABILITY IMPROVEMENT AND PATTERN COLLAPSE MITIGATION

A method for patterning a substrate is described. The patterning method includes receiving a first patterned layer overlying a material layer to be etched on a substrate, wherein the first patterned layer is composed of a resist material having (i) material properties that provide lithographic resol...

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Bibliographische Detailangaben

1. Verfasser:	HULI LIOR
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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