METHOD OF MANUFACTURING THROUGH SILICON VIA STACKED STRUCTURE

A method of manufacturing through silicon via stacked structures. A plurality of substrates is provided. At least one tapered hole is formed on one surface of each substrate. Each tapered hole is filled up with a tapered through silicon via. A recessed portion is formed on the wider end of each tape...

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1. Verfasser:	LIN POUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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