Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance
Curing of a passivation layer applied to the surface of a ferroelectric integrated circuit so as to enhance the polarization characteristics of the ferroelectric structures. A passivation layer, such as a polyimide, is applied to the surface of the ferroelectric integrated circuit after fabrication...
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creator | RODRIGUEZ JOHN A WEN HUANGUN ACOSTA ANTONIO GUILLERMO SUMMERFELT SCOTT ROBERT BAILEY RICHARD ALLEN SAN KEMAL TAMER |
description | Curing of a passivation layer applied to the surface of a ferroelectric integrated circuit so as to enhance the polarization characteristics of the ferroelectric structures. A passivation layer, such as a polyimide, is applied to the surface of the ferroelectric integrated circuit after fabrication of the active devices. The passivation layer is cured by exposure to a high temperature, below the Curie temperature of the ferroelectric material, for a short duration such as on the order of ten minutes. Variable frequency microwave energy may be used to effect such curing. The cured passivation layer attains a tensile stress state, and as a result imparts a compressive stress upon the underlying ferroelectric material. Polarization may be further enhanced by polarizing the ferroelectric material prior to the cure process. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2016086960A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2016086960A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2016086960A13</originalsourceid><addsrcrecordid>eNqNi8EKgkAURd20iOofHrQWtEByGaIUtBCytQzTnRrQefJmLOjrM-oDWl0459x5ZE78jBv0A0SFUUC18t4-VLDsiA1VEGF00EGspqMLuE0hrlRY0aMNngwLle6unJ5ozZ0S-_rea8gk-49ZRjOjOo_VbxfRuiqb4hBj4BZ-UBoOob2cN0maJbssz5J9uv2vegO-KUEh</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance</title><source>esp@cenet</source><creator>RODRIGUEZ JOHN A ; WEN HUANGUN ; ACOSTA ANTONIO GUILLERMO ; SUMMERFELT SCOTT ROBERT ; BAILEY RICHARD ALLEN ; SAN KEMAL TAMER</creator><creatorcontrib>RODRIGUEZ JOHN A ; WEN HUANGUN ; ACOSTA ANTONIO GUILLERMO ; SUMMERFELT SCOTT ROBERT ; BAILEY RICHARD ALLEN ; SAN KEMAL TAMER</creatorcontrib><description>Curing of a passivation layer applied to the surface of a ferroelectric integrated circuit so as to enhance the polarization characteristics of the ferroelectric structures. A passivation layer, such as a polyimide, is applied to the surface of the ferroelectric integrated circuit after fabrication of the active devices. The passivation layer is cured by exposure to a high temperature, below the Curie temperature of the ferroelectric material, for a short duration such as on the order of ten minutes. Variable frequency microwave energy may be used to effect such curing. The cured passivation layer attains a tensile stress state, and as a result imparts a compressive stress upon the underlying ferroelectric material. Polarization may be further enhanced by polarizing the ferroelectric material prior to the cure process.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160324&DB=EPODOC&CC=US&NR=2016086960A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160324&DB=EPODOC&CC=US&NR=2016086960A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RODRIGUEZ JOHN A</creatorcontrib><creatorcontrib>WEN HUANGUN</creatorcontrib><creatorcontrib>ACOSTA ANTONIO GUILLERMO</creatorcontrib><creatorcontrib>SUMMERFELT SCOTT ROBERT</creatorcontrib><creatorcontrib>BAILEY RICHARD ALLEN</creatorcontrib><creatorcontrib>SAN KEMAL TAMER</creatorcontrib><title>Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance</title><description>Curing of a passivation layer applied to the surface of a ferroelectric integrated circuit so as to enhance the polarization characteristics of the ferroelectric structures. A passivation layer, such as a polyimide, is applied to the surface of the ferroelectric integrated circuit after fabrication of the active devices. The passivation layer is cured by exposure to a high temperature, below the Curie temperature of the ferroelectric material, for a short duration such as on the order of ten minutes. Variable frequency microwave energy may be used to effect such curing. The cured passivation layer attains a tensile stress state, and as a result imparts a compressive stress upon the underlying ferroelectric material. Polarization may be further enhanced by polarizing the ferroelectric material prior to the cure process.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi8EKgkAURd20iOofHrQWtEByGaIUtBCytQzTnRrQefJmLOjrM-oDWl0459x5ZE78jBv0A0SFUUC18t4-VLDsiA1VEGF00EGspqMLuE0hrlRY0aMNngwLle6unJ5ozZ0S-_rea8gk-49ZRjOjOo_VbxfRuiqb4hBj4BZ-UBoOob2cN0maJbssz5J9uv2vegO-KUEh</recordid><startdate>20160324</startdate><enddate>20160324</enddate><creator>RODRIGUEZ JOHN A</creator><creator>WEN HUANGUN</creator><creator>ACOSTA ANTONIO GUILLERMO</creator><creator>SUMMERFELT SCOTT ROBERT</creator><creator>BAILEY RICHARD ALLEN</creator><creator>SAN KEMAL TAMER</creator><scope>EVB</scope></search><sort><creationdate>20160324</creationdate><title>Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance</title><author>RODRIGUEZ JOHN A ; WEN HUANGUN ; ACOSTA ANTONIO GUILLERMO ; SUMMERFELT SCOTT ROBERT ; BAILEY RICHARD ALLEN ; SAN KEMAL TAMER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016086960A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>RODRIGUEZ JOHN A</creatorcontrib><creatorcontrib>WEN HUANGUN</creatorcontrib><creatorcontrib>ACOSTA ANTONIO GUILLERMO</creatorcontrib><creatorcontrib>SUMMERFELT SCOTT ROBERT</creatorcontrib><creatorcontrib>BAILEY RICHARD ALLEN</creatorcontrib><creatorcontrib>SAN KEMAL TAMER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RODRIGUEZ JOHN A</au><au>WEN HUANGUN</au><au>ACOSTA ANTONIO GUILLERMO</au><au>SUMMERFELT SCOTT ROBERT</au><au>BAILEY RICHARD ALLEN</au><au>SAN KEMAL TAMER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance</title><date>2016-03-24</date><risdate>2016</risdate><abstract>Curing of a passivation layer applied to the surface of a ferroelectric integrated circuit so as to enhance the polarization characteristics of the ferroelectric structures. A passivation layer, such as a polyimide, is applied to the surface of the ferroelectric integrated circuit after fabrication of the active devices. The passivation layer is cured by exposure to a high temperature, below the Curie temperature of the ferroelectric material, for a short duration such as on the order of ten minutes. Variable frequency microwave energy may be used to effect such curing. The cured passivation layer attains a tensile stress state, and as a result imparts a compressive stress upon the underlying ferroelectric material. Polarization may be further enhanced by polarizing the ferroelectric material prior to the cure process.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance |
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