MULTIMETAL INTERLAYER INTERCONNECTS

A set of trenches can be formed in a thin film dielectric layer located on a substrate. The set of trenches can be filled with a predominantly tungsten layer that electrically connects circuit components located on the substrate. The tungsten layer can be recessed below an upper surface of the thin...

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Hauptverfasser:	RATH DAVID L, TSENG WEI-TSU, HUANG ELBERT E
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	RATH DAVID L TSENG WEI-TSU HUANG ELBERT E
description	A set of trenches can be formed in a thin film dielectric layer located on a substrate. The set of trenches can be filled with a predominantly tungsten layer that electrically connects circuit components located on the substrate. The tungsten layer can be recessed below an upper surface of the thin film dielectric layer, while maintaining electrical connection between the circuit components located on the substrate. A liner can be formed over the tungsten layer in the trenches. A metal layer that is predominantly made from a metal other than tungsten, can be formed over the liner.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	MULTIMETAL INTERLAYER INTERCONNECTS
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