SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
A semiconductor device and a manufacturing method of the same are provided. The semiconductor device includes a substrate, a first dielectric layer, a first conductive layer, and an isolation structure. The substrate has a trench. The first dielectric layer is disposed on the substrate between two n...
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| creator | HSU FANG-HAO LEE HONG-JI |
| description | A semiconductor device and a manufacturing method of the same are provided. The semiconductor device includes a substrate, a first dielectric layer, a first conductive layer, and an isolation structure. The substrate has a trench. The first dielectric layer is disposed on the substrate between two neighboring trenches. The first conductive layer is disposed on the first dielectric layer. The isolation structure, including a step zone and a recessed zone, is disposed in the trench, wherein an upper surface of the step zone is higher than an upper surface of the first dielectric layer. |
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The semiconductor device includes a substrate, a first dielectric layer, a first conductive layer, and an isolation structure. The substrate has a trench. The first dielectric layer is disposed on the substrate between two neighboring trenches. The first conductive layer is disposed on the first dielectric layer. The isolation structure, including a step zone and a recessed zone, is disposed in the trench, wherein an upper surface of the step zone is higher than an upper surface of the first dielectric layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160303&DB=EPODOC&CC=US&NR=2016064479A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160303&DB=EPODOC&CC=US&NR=2016064479A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HSU FANG-HAO</creatorcontrib><creatorcontrib>LEE HONG-JI</creatorcontrib><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME</title><description>A semiconductor device and a manufacturing method of the same are provided. The semiconductor device includes a substrate, a first dielectric layer, a first conductive layer, and an isolation structure. The substrate has a trench. The first dielectric layer is disposed on the substrate between two neighboring trenches. The first conductive layer is disposed on the first dielectric layer. The isolation structure, including a step zone and a recessed zone, is disposed in the trench, wherein an upper surface of the step zone is higher than an upper surface of the first dielectric layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HX0C3VzdA4JDfL0c1fwdQ3x8HdR8HdTCPFwVQh29HXlYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBoZmBmYmJuaWjobGxKkCACZcKZU</recordid><startdate>20160303</startdate><enddate>20160303</enddate><creator>HSU FANG-HAO</creator><creator>LEE HONG-JI</creator><scope>EVB</scope></search><sort><creationdate>20160303</creationdate><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME</title><author>HSU FANG-HAO ; LEE HONG-JI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016064479A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HSU FANG-HAO</creatorcontrib><creatorcontrib>LEE HONG-JI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HSU FANG-HAO</au><au>LEE HONG-JI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME</title><date>2016-03-03</date><risdate>2016</risdate><abstract>A semiconductor device and a manufacturing method of the same are provided. The semiconductor device includes a substrate, a first dielectric layer, a first conductive layer, and an isolation structure. The substrate has a trench. The first dielectric layer is disposed on the substrate between two neighboring trenches. The first conductive layer is disposed on the first dielectric layer. The isolation structure, including a step zone and a recessed zone, is disposed in the trench, wherein an upper surface of the step zone is higher than an upper surface of the first dielectric layer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
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