PATTERN DATA CREATING METHOD, TEMPLATE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
According to one embodiment, a pattern data creating method includes a calculation process, a determination process, and a correction process. In the calculation process, it is calculated a stress distribution of stresses that are applied to a template when a distance between the template and a subs...
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| creator | KOBAYASHI SACHIKO SHIMIZU MITSUKO |
| description | According to one embodiment, a pattern data creating method includes a calculation process, a determination process, and a correction process. In the calculation process, it is calculated a stress distribution of stresses that are applied to a template when a distance between the template and a substrate on which resist are disposed is predetermined, the template including a template pattern. In the determination process, it is determined whether or not there is a stress concentration spot in the template pattern at which a stress value larger than a predetermined criterion value is to appear. If the stress concentration spot is present, in the correction process, it is a corrected pattern data of the template pattern such that the stress value at the stress concentration spot becomes a stress value not larger than the predetermined criterion value. |
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In the calculation process, it is calculated a stress distribution of stresses that are applied to a template when a distance between the template and a substrate on which resist are disposed is predetermined, the template including a template pattern. In the determination process, it is determined whether or not there is a stress concentration spot in the template pattern at which a stress value larger than a predetermined criterion value is to appear. If the stress concentration spot is present, in the correction process, it is a corrected pattern data of the template pattern such that the stress value at the stress concentration spot becomes a stress value not larger than the predetermined criterion value.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CONTROL OR REGULATING SYSTEMS IN GENERAL ; CONTROLLING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS ; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS ; PHYSICS ; REGULATING ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160303&DB=EPODOC&CC=US&NR=2016064368A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160303&DB=EPODOC&CC=US&NR=2016064368A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KOBAYASHI SACHIKO</creatorcontrib><creatorcontrib>SHIMIZU MITSUKO</creatorcontrib><title>PATTERN DATA CREATING METHOD, TEMPLATE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD</title><description>According to one embodiment, a pattern data creating method includes a calculation process, a determination process, and a correction process. In the calculation process, it is calculated a stress distribution of stresses that are applied to a template when a distance between the template and a substrate on which resist are disposed is predetermined, the template including a template pattern. In the determination process, it is determined whether or not there is a stress concentration spot in the template pattern at which a stress value larger than a predetermined criterion value is to appear. If the stress concentration spot is present, in the correction process, it is a corrected pattern data of the template pattern such that the stress value at the stress concentration spot becomes a stress value not larger than the predetermined criterion value.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CONTROL OR REGULATING SYSTEMS IN GENERAL</subject><subject>CONTROLLING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FUNCTIONAL ELEMENTS OF SUCH SYSTEMS</subject><subject>MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS</subject><subject>PHYSICS</subject><subject>REGULATING</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy7EKwjAQgOEsDqK-w4FrhdZKcD0uVxswSUkvXUuROIkW6vvjIrg6_cv3r1XqUISjB4OCQJFRrL-AY2mDKUDYdVcULgC9gZ6dpeBNIgkRDA-WGBz61CBJir9xq1b36bHk3bcbtW9YqD3k-TXmZZ5u-ZnfY-qPZaVLfar1Gav6P_UBDdAxSQ</recordid><startdate>20160303</startdate><enddate>20160303</enddate><creator>KOBAYASHI SACHIKO</creator><creator>SHIMIZU MITSUKO</creator><scope>EVB</scope></search><sort><creationdate>20160303</creationdate><title>PATTERN DATA CREATING METHOD, TEMPLATE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD</title><author>KOBAYASHI SACHIKO ; SHIMIZU MITSUKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016064368A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CONTROL OR REGULATING SYSTEMS IN GENERAL</topic><topic>CONTROLLING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FUNCTIONAL ELEMENTS OF SUCH SYSTEMS</topic><topic>MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS</topic><topic>PHYSICS</topic><topic>REGULATING</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KOBAYASHI SACHIKO</creatorcontrib><creatorcontrib>SHIMIZU MITSUKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KOBAYASHI SACHIKO</au><au>SHIMIZU MITSUKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PATTERN DATA CREATING METHOD, TEMPLATE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD</title><date>2016-03-03</date><risdate>2016</risdate><abstract>According to one embodiment, a pattern data creating method includes a calculation process, a determination process, and a correction process. In the calculation process, it is calculated a stress distribution of stresses that are applied to a template when a distance between the template and a substrate on which resist are disposed is predetermined, the template including a template pattern. In the determination process, it is determined whether or not there is a stress concentration spot in the template pattern at which a stress value larger than a predetermined criterion value is to appear. If the stress concentration spot is present, in the correction process, it is a corrected pattern data of the template pattern such that the stress value at the stress concentration spot becomes a stress value not larger than the predetermined criterion value.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CONTROL OR REGULATING SYSTEMS IN GENERAL CONTROLLING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FUNCTIONAL ELEMENTS OF SUCH SYSTEMS MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS PHYSICS REGULATING SEMICONDUCTOR DEVICES |
| title | PATTERN DATA CREATING METHOD, TEMPLATE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
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