MASK PATTERN STRUCTURES, METHODS OF FORMING HOLES USING THE SAME, AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME
In a method of forming holes, a plurality of guide patterns physically spaced apart from each other is formed on an object layer. The guide pattern has a ring shape and includes a first opening therein. A self-aligned layer is formed on the object layer and the guide patterns to fill the first openi...
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| creator | NAM JAE-WOO KIM EUN-SUNG |
| description | In a method of forming holes, a plurality of guide patterns physically spaced apart from each other is formed on an object layer. The guide pattern has a ring shape and includes a first opening therein. A self-aligned layer is formed on the object layer and the guide patterns to fill the first opening. Preliminary holes are formed by removing portions of the self-aligned layer which are self-assembled in the first opening and between the guide patterns neighboring each other. The object layer is partially etched through the preliminary holes. |
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The guide pattern has a ring shape and includes a first opening therein. A self-aligned layer is formed on the object layer and the guide patterns to fill the first opening. Preliminary holes are formed by removing portions of the self-aligned layer which are self-assembled in the first opening and between the guide patterns neighboring each other. The object layer is partially etched through the preliminary holes.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160303&DB=EPODOC&CC=US&NR=2016064235A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160303&DB=EPODOC&CC=US&NR=2016064235A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAM JAE-WOO</creatorcontrib><creatorcontrib>KIM EUN-SUNG</creatorcontrib><title>MASK PATTERN STRUCTURES, METHODS OF FORMING HOLES USING THE SAME, AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME</title><description>In a method of forming holes, a plurality of guide patterns physically spaced apart from each other is formed on an object layer. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | MASK PATTERN STRUCTURES, METHODS OF FORMING HOLES USING THE SAME, AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME |
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