Semiconductor Device and Fabrication Method Thereof

A semiconductor device and a method for fabricating the semiconductor device are disclosed. A gate stack is formed over a surface of the substrate. A recess cavity is formed in the substrate adjacent to the gate stack. A first epitaxial (epi) material is then formed in the recess cavity. A second ep...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHEN ZHAONG, HUANG YU-LIEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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