SELF-ALIGNED BIPOLAR JUNCTION TRANSISTOR HAVING SELF-PLANARIZING ISOLATION RAISED BASE STRUCTURES

A collector region is formed between insulating shallow trench isolation regions within a substrate. A base material is epitaxially grown on the collector region and the shallow trench isolation regions. The base material forms a base region on the collector region and extrinsic base regions on the...

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Bibliographische Detailangaben

Hauptverfasser:	FEILCHENFELD NATALIE B, LIU QIZHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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