Semiconductor device and method of manufacturing the same

A semiconductor device is disclosed, comprising: a substrate; a semiconductor layer disposed on the substrate; a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode disposed between the source electrode and the drain electrode; a dielectric layer disposed...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: PEI FENGLI, ZHANG NAIQIAN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device is disclosed, comprising: a substrate; a semiconductor layer disposed on the substrate; a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode disposed between the source electrode and the drain electrode; a dielectric layer disposed on at least a part of the surface of the semiconductor layer which is between the gate electrode and the drain electrode, the dielectric layer having at least a recess therein; and a source field plate disposed on the dielectric layer and at least partially covering the recess, the source field plate being electrically connected to the source electrode through at least a conductive path. A method of manufacturing such a semiconductor device is also disclosed.