COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OF SILICON NITRIDE

Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YANDERS KEVIN P, BOWERS WILLIAM R, BISCOTTO MARK A, SPARKS EILEEN, COOPER EMANUEL I, KORZENSKI MICHAEL B
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YANDERS KEVIN P
BOWERS WILLIAM R
BISCOTTO MARK A
SPARKS EILEEN
COOPER EMANUEL I
KORZENSKI MICHAEL B
description Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 min−1.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2016035580A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2016035580A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2016035580A13</originalsourceid><addsrcrecordid>eNqNyrEKwjAQANAsDqL-w4GzkFoqriG5kIMkJ720aykSJ9FC_X9c_ACnt7ytQsvpxkKFOAuY7CBhCewEPPdQAoJgRFtoROgx8WgisAehSJYzZCo9OdyrzWN-rvXwc6eOHosNp7q8p7ou872-6mca5Kybi2677qpN0_63vj4qLQE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OF SILICON NITRIDE</title><source>esp@cenet</source><creator>YANDERS KEVIN P ; BOWERS WILLIAM R ; BISCOTTO MARK A ; SPARKS EILEEN ; COOPER EMANUEL I ; KORZENSKI MICHAEL B</creator><creatorcontrib>YANDERS KEVIN P ; BOWERS WILLIAM R ; BISCOTTO MARK A ; SPARKS EILEEN ; COOPER EMANUEL I ; KORZENSKI MICHAEL B</creatorcontrib><description>Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 min−1.</description><language>eng</language><subject>ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR ; ADHESIVES ; APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CINEMATOGRAPHY ; CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS,e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES,DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS ; CONVEYING ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HANDLING THIN OR FILAMENTARY MATERIAL ; HOLOGRAPHY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; MATERIALS THEREFOR ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; ORIGINALS THEREFOR ; PACKAGES ; PACKAGING ELEMENTS ; PACKING ; PAINTS ; PERFORMING OPERATIONS ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; POLISHES ; SEMICONDUCTOR DEVICES ; STORING ; TRANSPORTING</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160204&amp;DB=EPODOC&amp;CC=US&amp;NR=2016035580A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160204&amp;DB=EPODOC&amp;CC=US&amp;NR=2016035580A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YANDERS KEVIN P</creatorcontrib><creatorcontrib>BOWERS WILLIAM R</creatorcontrib><creatorcontrib>BISCOTTO MARK A</creatorcontrib><creatorcontrib>SPARKS EILEEN</creatorcontrib><creatorcontrib>COOPER EMANUEL I</creatorcontrib><creatorcontrib>KORZENSKI MICHAEL B</creatorcontrib><title>COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OF SILICON NITRIDE</title><description>Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 min−1.</description><subject>ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR</subject><subject>ADHESIVES</subject><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS,e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES,DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS</subject><subject>CONVEYING</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HANDLING THIN OR FILAMENTARY MATERIAL</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>ORIGINALS THEREFOR</subject><subject>PACKAGES</subject><subject>PACKAGING ELEMENTS</subject><subject>PACKING</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STORING</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQANAsDqL-w4GzkFoqriG5kIMkJ720aykSJ9FC_X9c_ACnt7ytQsvpxkKFOAuY7CBhCewEPPdQAoJgRFtoROgx8WgisAehSJYzZCo9OdyrzWN-rvXwc6eOHosNp7q8p7ou872-6mca5Kybi2677qpN0_63vj4qLQE</recordid><startdate>20160204</startdate><enddate>20160204</enddate><creator>YANDERS KEVIN P</creator><creator>BOWERS WILLIAM R</creator><creator>BISCOTTO MARK A</creator><creator>SPARKS EILEEN</creator><creator>COOPER EMANUEL I</creator><creator>KORZENSKI MICHAEL B</creator><scope>EVB</scope></search><sort><creationdate>20160204</creationdate><title>COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OF SILICON NITRIDE</title><author>YANDERS KEVIN P ; BOWERS WILLIAM R ; BISCOTTO MARK A ; SPARKS EILEEN ; COOPER EMANUEL I ; KORZENSKI MICHAEL B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016035580A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR</topic><topic>ADHESIVES</topic><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS,e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES,DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS</topic><topic>CONVEYING</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HANDLING THIN OR FILAMENTARY MATERIAL</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>ORIGINALS THEREFOR</topic><topic>PACKAGES</topic><topic>PACKAGING ELEMENTS</topic><topic>PACKING</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STORING</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>YANDERS KEVIN P</creatorcontrib><creatorcontrib>BOWERS WILLIAM R</creatorcontrib><creatorcontrib>BISCOTTO MARK A</creatorcontrib><creatorcontrib>SPARKS EILEEN</creatorcontrib><creatorcontrib>COOPER EMANUEL I</creatorcontrib><creatorcontrib>KORZENSKI MICHAEL B</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YANDERS KEVIN P</au><au>BOWERS WILLIAM R</au><au>BISCOTTO MARK A</au><au>SPARKS EILEEN</au><au>COOPER EMANUEL I</au><au>KORZENSKI MICHAEL B</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OF SILICON NITRIDE</title><date>2016-02-04</date><risdate>2016</risdate><abstract>Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 min−1.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2016035580A1
source esp@cenet
subjects ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR
ADHESIVES
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS,e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES,DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS
CONVEYING
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HANDLING THIN OR FILAMENTARY MATERIAL
HOLOGRAPHY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
MATERIALS THEREFOR
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
ORIGINALS THEREFOR
PACKAGES
PACKAGING ELEMENTS
PACKING
PAINTS
PERFORMING OPERATIONS
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
POLISHES
SEMICONDUCTOR DEVICES
STORING
TRANSPORTING
title COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OF SILICON NITRIDE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T04%3A22%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YANDERS%20KEVIN%20P&rft.date=2016-02-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2016035580A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true