Inspection for Multiple Process Steps in a Single Inspection Process
Various embodiments for detecting defects on a wafer are provided. One method includes acquiring output generated by an inspection system for a wafer during an inspection process that is performed after at least first and second process steps have been performed on the wafer. The first and second pr...
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| creator | BABULNATH RAGHAV BARIS OKSEN TOROS |
| description | Various embodiments for detecting defects on a wafer are provided. One method includes acquiring output generated by an inspection system for a wafer during an inspection process that is performed after at least first and second process steps have been performed on the wafer. The first and second process steps include forming first and second portions, respectively, of a design on the wafer. The first and second portions of the design are mutually exclusive in space on the wafer. The method also includes detecting defects on the wafer based on the output and determining positions of the defects with respect to the first and second portions of the design. In addition, the method includes associating different portions of the defects with the first or second process step based on the positions of the defects with respect to the first and second portions of the design. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2016033420A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2016033420A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2016033420A13</originalsourceid><addsrcrecordid>eNrjZHDxzCsuSE0uyczPU0jLL1LwLc0pySzISVUIKMpPTi0uVgguSS0oVsjMU0hUCM7MSwfKIOmAKuJhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhmYGxsYmRgaOhsbEqQIAW7gzWw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Inspection for Multiple Process Steps in a Single Inspection Process</title><source>esp@cenet</source><creator>BABULNATH RAGHAV ; BARIS OKSEN TOROS</creator><creatorcontrib>BABULNATH RAGHAV ; BARIS OKSEN TOROS</creatorcontrib><description>Various embodiments for detecting defects on a wafer are provided. One method includes acquiring output generated by an inspection system for a wafer during an inspection process that is performed after at least first and second process steps have been performed on the wafer. The first and second process steps include forming first and second portions, respectively, of a design on the wafer. The first and second portions of the design are mutually exclusive in space on the wafer. The method also includes detecting defects on the wafer based on the output and determining positions of the defects with respect to the first and second portions of the design. In addition, the method includes associating different portions of the defects with the first or second process step based on the positions of the defects with respect to the first and second portions of the design.</description><language>eng</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; PHYSICS ; TESTING</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160204&DB=EPODOC&CC=US&NR=2016033420A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160204&DB=EPODOC&CC=US&NR=2016033420A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BABULNATH RAGHAV</creatorcontrib><creatorcontrib>BARIS OKSEN TOROS</creatorcontrib><title>Inspection for Multiple Process Steps in a Single Inspection Process</title><description>Various embodiments for detecting defects on a wafer are provided. One method includes acquiring output generated by an inspection system for a wafer during an inspection process that is performed after at least first and second process steps have been performed on the wafer. The first and second process steps include forming first and second portions, respectively, of a design on the wafer. The first and second portions of the design are mutually exclusive in space on the wafer. The method also includes detecting defects on the wafer based on the output and determining positions of the defects with respect to the first and second portions of the design. In addition, the method includes associating different portions of the defects with the first or second process step based on the positions of the defects with respect to the first and second portions of the design.</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDxzCsuSE0uyczPU0jLL1LwLc0pySzISVUIKMpPTi0uVgguSS0oVsjMU0hUCM7MSwfKIOmAKuJhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhmYGxsYmRgaOhsbEqQIAW7gzWw</recordid><startdate>20160204</startdate><enddate>20160204</enddate><creator>BABULNATH RAGHAV</creator><creator>BARIS OKSEN TOROS</creator><scope>EVB</scope></search><sort><creationdate>20160204</creationdate><title>Inspection for Multiple Process Steps in a Single Inspection Process</title><author>BABULNATH RAGHAV ; BARIS OKSEN TOROS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016033420A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>BABULNATH RAGHAV</creatorcontrib><creatorcontrib>BARIS OKSEN TOROS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BABULNATH RAGHAV</au><au>BARIS OKSEN TOROS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Inspection for Multiple Process Steps in a Single Inspection Process</title><date>2016-02-04</date><risdate>2016</risdate><abstract>Various embodiments for detecting defects on a wafer are provided. One method includes acquiring output generated by an inspection system for a wafer during an inspection process that is performed after at least first and second process steps have been performed on the wafer. The first and second process steps include forming first and second portions, respectively, of a design on the wafer. The first and second portions of the design are mutually exclusive in space on the wafer. The method also includes detecting defects on the wafer based on the output and determining positions of the defects with respect to the first and second portions of the design. In addition, the method includes associating different portions of the defects with the first or second process step based on the positions of the defects with respect to the first and second portions of the design.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS TESTING |
| title | Inspection for Multiple Process Steps in a Single Inspection Process |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T22%3A03%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=BABULNATH%20RAGHAV&rft.date=2016-02-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2016033420A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |