ANISOTROPIC MATERIAL DAMAGE PROCESS FOR ETCHING LOW-K DIELECTRIC MATERIALS

ANISOTROPIC MATERIAL DAMAGE PROCESS FOR ETCHING LOW-K DIELECTRIC MATERIALS

In one example, a method includes forming a mask layer above or in a dielectric material. The dielectric material is exposed to photon radiation in an ambient atmosphere comprising a carbon gettering agent to generate damaged portions of the dielectric material. The mask layer blocks the photon radi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: RYAN ERROL TODD
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator RYAN ERROL TODD
description In one example, a method includes forming a mask layer above or in a dielectric material. The dielectric material is exposed to photon radiation in an ambient atmosphere comprising a carbon gettering agent to generate damaged portions of the dielectric material. The mask layer blocks the photon radiation. The damaged portions of the dielectric material are removed.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2016020140A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2016020140A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2016020140A13</originalsourceid><addsrcrecordid>eNrjZPBy9PMM9g8J8g_wdFbwdQxxDfJ09FFwcfR1dHdVCAjyd3YNDlZw8w9ScA1x9vD0c1fw8Q_X9VZw8XT1cXUOCULSFMzDwJqWmFOcyguluRmU3UC6dFML8uNTiwsSk1PzUkviQ4ONDAzNDICEiYGjoTFxqgAQlC4q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ANISOTROPIC MATERIAL DAMAGE PROCESS FOR ETCHING LOW-K DIELECTRIC MATERIALS</title><source>esp@cenet</source><creator>RYAN ERROL TODD</creator><creatorcontrib>RYAN ERROL TODD</creatorcontrib><description>In one example, a method includes forming a mask layer above or in a dielectric material. The dielectric material is exposed to photon radiation in an ambient atmosphere comprising a carbon gettering agent to generate damaged portions of the dielectric material. The mask layer blocks the photon radiation. The damaged portions of the dielectric material are removed.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160121&amp;DB=EPODOC&amp;CC=US&amp;NR=2016020140A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160121&amp;DB=EPODOC&amp;CC=US&amp;NR=2016020140A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RYAN ERROL TODD</creatorcontrib><title>ANISOTROPIC MATERIAL DAMAGE PROCESS FOR ETCHING LOW-K DIELECTRIC MATERIALS</title><description>In one example, a method includes forming a mask layer above or in a dielectric material. The dielectric material is exposed to photon radiation in an ambient atmosphere comprising a carbon gettering agent to generate damaged portions of the dielectric material. The mask layer blocks the photon radiation. The damaged portions of the dielectric material are removed.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPBy9PMM9g8J8g_wdFbwdQxxDfJ09FFwcfR1dHdVCAjyd3YNDlZw8w9ScA1x9vD0c1fw8Q_X9VZw8XT1cXUOCULSFMzDwJqWmFOcyguluRmU3UC6dFML8uNTiwsSk1PzUkviQ4ONDAzNDICEiYGjoTFxqgAQlC4q</recordid><startdate>20160121</startdate><enddate>20160121</enddate><creator>RYAN ERROL TODD</creator><scope>EVB</scope></search><sort><creationdate>20160121</creationdate><title>ANISOTROPIC MATERIAL DAMAGE PROCESS FOR ETCHING LOW-K DIELECTRIC MATERIALS</title><author>RYAN ERROL TODD</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016020140A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>RYAN ERROL TODD</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RYAN ERROL TODD</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ANISOTROPIC MATERIAL DAMAGE PROCESS FOR ETCHING LOW-K DIELECTRIC MATERIALS</title><date>2016-01-21</date><risdate>2016</risdate><abstract>In one example, a method includes forming a mask layer above or in a dielectric material. The dielectric material is exposed to photon radiation in an ambient atmosphere comprising a carbon gettering agent to generate damaged portions of the dielectric material. The mask layer blocks the photon radiation. The damaged portions of the dielectric material are removed.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2016020140A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title ANISOTROPIC MATERIAL DAMAGE PROCESS FOR ETCHING LOW-K DIELECTRIC MATERIALS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T03%3A40%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=RYAN%20ERROL%20TODD&rft.date=2016-01-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2016020140A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true