METHOD OF SELECTIVELY DEPOSITING FLOATING GATE MATERIAL IN A MEMORY DEVICE
Undesirable metal contamination from a selective metal deposition process can be minimized or eliminated by employing a first material layer on a bevel and a back side of a substrate, while providing a second material layer only on a front side of the substrate. The first material layer and the seco...
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| creator | PHAM TUAN KINOSHITA HIROYUKI INOUE SHIGEHISA GUNJI-YONEOKA MARIKA SHARANGPANI RAHUL SUYAMA ATUSUSHI YAMAGUCHI KENSUKE MAKALA RAGHUVEER S |
| description | Undesirable metal contamination from a selective metal deposition process can be minimized or eliminated by employing a first material layer on a bevel and a back side of a substrate, while providing a second material layer only on a front side of the substrate. The first material layer and the second material layer are selected such that a selective deposition process of a metal material provides a metal material portion only on the second material layer, while no deposition occurs on the first material layer or isolated islands of the metal material are formed on the first material layer. Any residual metal material can be removed from the bevel and the back side by a wet etch to reduce or prevent metal contamination from the deposited metal material. |
| format | Patent |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD OF SELECTIVELY DEPOSITING FLOATING GATE MATERIAL IN A MEMORY DEVICE |
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