SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH REDUCED LEAKAGE CURRENT

The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrate...

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Bibliographische Detailangaben

Hauptverfasser:	NAKAMICHI MASARU, KITAI NAOKI, NISHIDA AKIO, OSADA KENICHI, SAITOH YOSHIKAZU, ISHIBASHI KOICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS PULSE TECHNIQUE SEMICONDUCTOR DEVICES STATIC STORES
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