METHOD OF MAKING A SPLIT GATE NON-VOLATILE MEMORY (NVM) CELL

Making a non-volatile memory (NVM) structure uses a semiconductor substrate. One embodiment includes forming a select gate structure including a first dummy material on the semiconductor substrate and forming a control gate structure including a second dummy material on the semiconductor substrate,...

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Bibliographische Detailangaben

Hauptverfasser:	WINSTEAD BRIAN A, LOIKO KONSTANTIN V
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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