HIGH-TEMPERATURE ISOTROPIC PLASMA ETCHING PROCESS TO PREVENT ELECTRICAL SHORTS

A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHANG YUNGSHAN, ROBY MARY ALYSSA DRUMMOND, LASSITER THOMAS WARREN, JIANG NENG, MOHAMMED NAYEEMUDDIN, SOMAN JOEL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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