HIGH-BRIGHTNESS SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING EXCELLENT CURRENT DISPERSION EFFECT BY INCLUDING SEPARATION REGION

HIGH-BRIGHTNESS SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING EXCELLENT CURRENT DISPERSION EFFECT BY INCLUDING SEPARATION REGION

The present invention relates to a semiconductor light-emitting device including a separation region for separating a light-emitting surface, so as to exhibit an excellent current dispersion effect and improve brightness characteristics. The semiconductor light-emitting device of the present inventi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KIM DONG-WOO, HWANG SEUNG-JOO, CHOI WON-JIN, SONG JUNG-SUB, KIM KEUK
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator KIM DONG-WOO
HWANG SEUNG-JOO
CHOI WON-JIN
SONG JUNG-SUB
KIM KEUK
description The present invention relates to a semiconductor light-emitting device including a separation region for separating a light-emitting surface, so as to exhibit an excellent current dispersion effect and improve brightness characteristics. The semiconductor light-emitting device of the present invention can obtain the effect for improving uniformity of effective current density by including the separation region for separating the light-emitting region, and can expect an improvement in optical efficiency through the excellent current dispersion effect.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2015333228A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2015333228A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2015333228A13</originalsourceid><addsrcrecordid>eNqNi7sKwjAUhrs4iPoOB5wLtkFwTU9Om0BMSy5Fp1IkTqKFuvruNuADuPwf_22dfaRqZF7ZRb0h58DRWWFrREDfWtApz5fIe2UaENQrJJC8T44uSFqT8YDB2kShXEfWqdYA1TWhh-oKyqAOIh0cddxyn2pLzYJttrqPjznuftxk-5o8yjxOryHO03iLz_gegisPxZExVpYnXrD_Vl8DRzzQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>HIGH-BRIGHTNESS SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING EXCELLENT CURRENT DISPERSION EFFECT BY INCLUDING SEPARATION REGION</title><source>esp@cenet</source><creator>KIM DONG-WOO ; HWANG SEUNG-JOO ; CHOI WON-JIN ; SONG JUNG-SUB ; KIM KEUK</creator><creatorcontrib>KIM DONG-WOO ; HWANG SEUNG-JOO ; CHOI WON-JIN ; SONG JUNG-SUB ; KIM KEUK</creatorcontrib><description>The present invention relates to a semiconductor light-emitting device including a separation region for separating a light-emitting surface, so as to exhibit an excellent current dispersion effect and improve brightness characteristics. The semiconductor light-emitting device of the present invention can obtain the effect for improving uniformity of effective current density by including the separation region for separating the light-emitting region, and can expect an improvement in optical efficiency through the excellent current dispersion effect.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20151119&amp;DB=EPODOC&amp;CC=US&amp;NR=2015333228A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20151119&amp;DB=EPODOC&amp;CC=US&amp;NR=2015333228A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM DONG-WOO</creatorcontrib><creatorcontrib>HWANG SEUNG-JOO</creatorcontrib><creatorcontrib>CHOI WON-JIN</creatorcontrib><creatorcontrib>SONG JUNG-SUB</creatorcontrib><creatorcontrib>KIM KEUK</creatorcontrib><title>HIGH-BRIGHTNESS SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING EXCELLENT CURRENT DISPERSION EFFECT BY INCLUDING SEPARATION REGION</title><description>The present invention relates to a semiconductor light-emitting device including a separation region for separating a light-emitting surface, so as to exhibit an excellent current dispersion effect and improve brightness characteristics. The semiconductor light-emitting device of the present invention can obtain the effect for improving uniformity of effective current density by including the separation region for separating the light-emitting region, and can expect an improvement in optical efficiency through the excellent current dispersion effect.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7sKwjAUhrs4iPoOB5wLtkFwTU9Om0BMSy5Fp1IkTqKFuvruNuADuPwf_22dfaRqZF7ZRb0h58DRWWFrREDfWtApz5fIe2UaENQrJJC8T44uSFqT8YDB2kShXEfWqdYA1TWhh-oKyqAOIh0cddxyn2pLzYJttrqPjznuftxk-5o8yjxOryHO03iLz_gegisPxZExVpYnXrD_Vl8DRzzQ</recordid><startdate>20151119</startdate><enddate>20151119</enddate><creator>KIM DONG-WOO</creator><creator>HWANG SEUNG-JOO</creator><creator>CHOI WON-JIN</creator><creator>SONG JUNG-SUB</creator><creator>KIM KEUK</creator><scope>EVB</scope></search><sort><creationdate>20151119</creationdate><title>HIGH-BRIGHTNESS SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING EXCELLENT CURRENT DISPERSION EFFECT BY INCLUDING SEPARATION REGION</title><author>KIM DONG-WOO ; HWANG SEUNG-JOO ; CHOI WON-JIN ; SONG JUNG-SUB ; KIM KEUK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2015333228A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM DONG-WOO</creatorcontrib><creatorcontrib>HWANG SEUNG-JOO</creatorcontrib><creatorcontrib>CHOI WON-JIN</creatorcontrib><creatorcontrib>SONG JUNG-SUB</creatorcontrib><creatorcontrib>KIM KEUK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM DONG-WOO</au><au>HWANG SEUNG-JOO</au><au>CHOI WON-JIN</au><au>SONG JUNG-SUB</au><au>KIM KEUK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HIGH-BRIGHTNESS SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING EXCELLENT CURRENT DISPERSION EFFECT BY INCLUDING SEPARATION REGION</title><date>2015-11-19</date><risdate>2015</risdate><abstract>The present invention relates to a semiconductor light-emitting device including a separation region for separating a light-emitting surface, so as to exhibit an excellent current dispersion effect and improve brightness characteristics. The semiconductor light-emitting device of the present invention can obtain the effect for improving uniformity of effective current density by including the separation region for separating the light-emitting region, and can expect an improvement in optical efficiency through the excellent current dispersion effect.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2015333228A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title HIGH-BRIGHTNESS SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING EXCELLENT CURRENT DISPERSION EFFECT BY INCLUDING SEPARATION REGION
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T11%3A18%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KIM%20DONG-WOO&rft.date=2015-11-19&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2015333228A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true