High Uniformity Screen and Epitaxial Layers for CMOS Devices

A transistor and method of fabrication thereof includes a screening layer formed at least in part in the semiconductor substrate beneath a channel layer and a gate stack, the gate stack including spacer structures on either side of the gate stack. The transistor includes a shallow lightly doped drai...

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Bibliographische Detailangaben

Hauptverfasser:	KIM SUNG HWAN, WANG LINGQUAN, ZHAO DALONG, LIU YUJIE, PRADHAN SAMEER, THOMPSON SCOTT E, DUANE MICHAEL, SHIFREN LUCIAN, RANADE PUSHKAR, BAKHISHEV TEYMUR, HOFFMANN THOMAS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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