POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS
One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET...
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| creator | PETTY-WEEKS SANDRA LOUISE READ MATTHEW SEAN SHAO HONGXIAO SUN WEIMIN SUN HSIANGIH WELCH PATRICK LAWRENCE ZHANG GUOHAO RIEGE JENS ALBRECHT ZAMPARDI, JR. PETER J OZALAS MATTHEW THOMAS SHEN HONG CHEN HOWARD E HOANG DINHPHUOC VU LEHTOLA PHILIP JOHN LOBIANCO ANTHONY JAMES GUO YIFAN JANANI MEHRAN MODI HARDIK BHUPENDRA NGUYEN HOANG MONG RIPLEY DAVID STEVEN KO TIN MYINT |
| description | One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof. |
| format | Patent |
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PETER J ; OZALAS MATTHEW THOMAS ; SHEN HONG ; CHEN HOWARD E ; HOANG DINHPHUOC VU ; LEHTOLA PHILIP JOHN ; LOBIANCO ANTHONY JAMES ; GUO YIFAN ; JANANI MEHRAN ; MODI HARDIK BHUPENDRA ; NGUYEN HOANG MONG ; RIPLEY DAVID STEVEN ; KO TIN MYINT</creator><creatorcontrib>PETTY-WEEKS SANDRA LOUISE ; READ MATTHEW SEAN ; SHAO HONGXIAO ; SUN WEIMIN ; SUN HSIANGIH ; WELCH PATRICK LAWRENCE ; ZHANG GUOHAO ; RIEGE JENS ALBRECHT ; ZAMPARDI, JR. PETER J ; OZALAS MATTHEW THOMAS ; SHEN HONG ; CHEN HOWARD E ; HOANG DINHPHUOC VU ; LEHTOLA PHILIP JOHN ; LOBIANCO ANTHONY JAMES ; GUO YIFAN ; JANANI MEHRAN ; MODI HARDIK BHUPENDRA ; NGUYEN HOANG MONG ; RIPLEY DAVID STEVEN ; KO TIN MYINT</creatorcontrib><description>One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. 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PETER J</au><au>OZALAS MATTHEW THOMAS</au><au>SHEN HONG</au><au>CHEN HOWARD E</au><au>HOANG DINHPHUOC VU</au><au>LEHTOLA PHILIP JOHN</au><au>LOBIANCO ANTHONY JAMES</au><au>GUO YIFAN</au><au>JANANI MEHRAN</au><au>MODI HARDIK BHUPENDRA</au><au>NGUYEN HOANG MONG</au><au>RIPLEY DAVID STEVEN</au><au>KO TIN MYINT</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS</title><date>2015-11-12</date><risdate>2015</risdate><abstract>One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AMPLIFIERS BASIC ELECTRONIC CIRCUITRY ELECTRICITY |
| title | POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS |
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