Multijunction Solar Cells Lattice Matched to InP Using Sb-Containing Alloys
A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from In1-xAlxAs1-ySby (with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), th...
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| creator | GONZALEZ MARIA VURGAFTMAN IGOR TISCHLER JOSEPH G CRESS CORY D WALTERS ROBERT J EKINS-DAUKES NICHOLAS JENKINS PHILLIP CHAN NGAI STAVRINOU PAUL ADAMS JESSICA MEYER JERRY R YAKES MICHAEL K LUMB MATTHEW P ABELL JOSHUA |
| description | A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from In1-xAlxAs1-ySby (with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from In1-a-bGaaAlbAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions. |
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In an exemplary three-junction embodiment, the top cell is formed from In1-xAlxAs1-ySby (with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from In1-a-bGaaAlbAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151112&DB=EPODOC&CC=US&NR=2015325720A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151112&DB=EPODOC&CC=US&NR=2015325720A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GONZALEZ MARIA</creatorcontrib><creatorcontrib>VURGAFTMAN IGOR</creatorcontrib><creatorcontrib>TISCHLER JOSEPH G</creatorcontrib><creatorcontrib>CRESS CORY D</creatorcontrib><creatorcontrib>WALTERS ROBERT J</creatorcontrib><creatorcontrib>EKINS-DAUKES NICHOLAS</creatorcontrib><creatorcontrib>JENKINS PHILLIP</creatorcontrib><creatorcontrib>CHAN NGAI</creatorcontrib><creatorcontrib>STAVRINOU PAUL</creatorcontrib><creatorcontrib>ADAMS JESSICA</creatorcontrib><creatorcontrib>MEYER JERRY R</creatorcontrib><creatorcontrib>YAKES MICHAEL K</creatorcontrib><creatorcontrib>LUMB MATTHEW P</creatorcontrib><creatorcontrib>ABELL JOSHUA</creatorcontrib><title>Multijunction Solar Cells Lattice Matched to InP Using Sb-Containing Alloys</title><description>A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from In1-xAlxAs1-ySby (with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from In1-a-bGaaAlbAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD2Lc0pycwqzUsuyczPUwjOz0ksUnBOzckpVvBJLCnJTE5V8E0sSc5ITVEoyVfwzAtQCC3OzEtXCE7Sdc7PK0nMzAPxHHNy8iuLeRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGhqbGRqbmRgaOhMXGqAMxeNXE</recordid><startdate>20151112</startdate><enddate>20151112</enddate><creator>GONZALEZ MARIA</creator><creator>VURGAFTMAN IGOR</creator><creator>TISCHLER JOSEPH G</creator><creator>CRESS CORY D</creator><creator>WALTERS ROBERT J</creator><creator>EKINS-DAUKES NICHOLAS</creator><creator>JENKINS PHILLIP</creator><creator>CHAN NGAI</creator><creator>STAVRINOU PAUL</creator><creator>ADAMS JESSICA</creator><creator>MEYER JERRY R</creator><creator>YAKES MICHAEL K</creator><creator>LUMB MATTHEW P</creator><creator>ABELL JOSHUA</creator><scope>EVB</scope></search><sort><creationdate>20151112</creationdate><title>Multijunction Solar Cells Lattice Matched to InP Using Sb-Containing Alloys</title><author>GONZALEZ MARIA ; VURGAFTMAN IGOR ; TISCHLER JOSEPH G ; CRESS CORY D ; WALTERS ROBERT J ; EKINS-DAUKES NICHOLAS ; JENKINS PHILLIP ; CHAN NGAI ; STAVRINOU PAUL ; ADAMS JESSICA ; MEYER JERRY R ; YAKES MICHAEL K ; LUMB MATTHEW P ; ABELL JOSHUA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2015325720A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GONZALEZ MARIA</creatorcontrib><creatorcontrib>VURGAFTMAN IGOR</creatorcontrib><creatorcontrib>TISCHLER JOSEPH G</creatorcontrib><creatorcontrib>CRESS CORY D</creatorcontrib><creatorcontrib>WALTERS ROBERT J</creatorcontrib><creatorcontrib>EKINS-DAUKES NICHOLAS</creatorcontrib><creatorcontrib>JENKINS PHILLIP</creatorcontrib><creatorcontrib>CHAN NGAI</creatorcontrib><creatorcontrib>STAVRINOU PAUL</creatorcontrib><creatorcontrib>ADAMS JESSICA</creatorcontrib><creatorcontrib>MEYER JERRY R</creatorcontrib><creatorcontrib>YAKES MICHAEL K</creatorcontrib><creatorcontrib>LUMB MATTHEW P</creatorcontrib><creatorcontrib>ABELL JOSHUA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GONZALEZ MARIA</au><au>VURGAFTMAN IGOR</au><au>TISCHLER JOSEPH G</au><au>CRESS CORY D</au><au>WALTERS ROBERT J</au><au>EKINS-DAUKES NICHOLAS</au><au>JENKINS PHILLIP</au><au>CHAN NGAI</au><au>STAVRINOU PAUL</au><au>ADAMS JESSICA</au><au>MEYER JERRY R</au><au>YAKES MICHAEL K</au><au>LUMB MATTHEW P</au><au>ABELL JOSHUA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Multijunction Solar Cells Lattice Matched to InP Using Sb-Containing Alloys</title><date>2015-11-12</date><risdate>2015</risdate><abstract>A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from In1-xAlxAs1-ySby (with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from In1-a-bGaaAlbAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Multijunction Solar Cells Lattice Matched to InP Using Sb-Containing Alloys |
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