CHANNEL REGION DOPANT CONTROL IN FIN FIELD EFFECT TRANSISTOR

A dummy gate structure straddling at least one semiconductor fin is formed on a substrate. Active semiconductor regions and raised active semiconductor regions may be formed. A planarization dielectric layer is formed over the at least one semiconductor fin, and the dummy gate structure is removed t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GREENE BRIAN J, CHOWDHURY MURSHED M, KUMAR ARVIND
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!