SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME

A semiconductor device includes a substrate including a first region and a second region, a first gate dielectric layer, a first lower gate electrode, and a first upper gate electrode sequentially stacked on the first region, a second gate dielectric layer, a second lower gate electrode, and a secon...

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Bibliographische Detailangaben
Hauptverfasser: OH YOUNGMOOK, SONG MINWOO, SONG MOONKYUN, CHO NAMGYU, WON SEOKJUN
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A semiconductor device includes a substrate including a first region and a second region, a first gate dielectric layer, a first lower gate electrode, and a first upper gate electrode sequentially stacked on the first region, a second gate dielectric layer, a second lower gate electrode, and a second upper gate electrode sequentially stacked on the second region, a first spacer disposed on a sidewall of the first upper gate electrode, a second spacer disposed on a sidewall of the second upper gate electrode, a third spacer covering the first spacer on the sidewall of the first upper gate electrode, and a fourth spacer covering the second spacer on the sidewall of the second upper gate electrode. At least one of a first sidewall of the first lower gate electrode and a second sidewall of the first lower gate electrode is in contact with the third spacer.