SEMICONDUCTOR DEVICE

A semiconductor device (100, 100′, 100″) and a method for manufacturing a semiconductor device (100, 100′, 100″). The semiconductor device (100, 100′, 100″) includes a substrate (104, 106), a GaN layer (112), and an AlGaN layer (114). The GaN layer (112) is located between the substrate (104, 106) a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS, BROEKMAN HANS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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