MAGNETIC MEMORY DEVICES

Magnetic memory devices include a plurality of first magnetic patterns on a substrate so as to be spaced apart from each other, a first insulating pattern between the first magnetic patterns to define the first magnetic patterns, and a tunnel barrier layer covering the first magnetic patterns and th...

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Bibliographische Detailangaben
Hauptverfasser: BAE BYOUNGJAE, KANG SHIN-JAE, PARK JONGCHUL, BYUN KYUNG RAE, NOH EUNSUN
Format: Patent
Sprache:eng
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Zusammenfassung:Magnetic memory devices include a plurality of first magnetic patterns on a substrate so as to be spaced apart from each other, a first insulating pattern between the first magnetic patterns to define the first magnetic patterns, and a tunnel barrier layer covering the first magnetic patterns and the first insulating pattern. The first insulating pattern includes a first magnetic element, and the first magnetic element is the same as a second magnetic element constituting the first magnetic patterns.