GAS-PHASE TUNGSTEN ETCH

Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a high flow of helium. Plasma effluents from the remote plasma are flowed into a substrate processi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG XIKUN, PARK SEUNG, LIU JIE, KIM SANG-JIN, WANG ANCHUAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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