SELECTIVE LOCAL METAL CAP LAYER FORMATION FOR IMPROVED ELECTROMIGRATION BEHAVIOR

A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD); masking selected regions of the one or more copper lines; selectively plating metal cap regions over exposed regions of the one or more coppe...

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Bibliographische Detailangaben

Hauptverfasser:	FILIPPI RONALD G, SIMON ANDREW H, CULP JAMES A, DYER THOMAS W, GRECO STEPHEN E, CHOI SAMUEL S, BAO JUNJING, LUSTIG NAFTALI E, BONILLA GRISELDA, ANGYAL MATTHEW S
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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