SELECTIVE LOCAL METAL CAP LAYER FORMATION FOR IMPROVED ELECTROMIGRATION BEHAVIOR

A method of forming a wiring structure for an integrated circuit device includes forming a first metal line within an interlevel dielectric (ILD) layer, and forming a second metal line in the ILD layer adjacent the first metal line; masking selected regions of the first and second metal lines; selec...

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Bibliographische Detailangaben

Hauptverfasser:	FILIPPI RONALD G, ZHANG LIJUAN, KALTALIOGLU ERDEM, WANG PINGUAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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