FLUORINE FREE TUNGSTEN ALD/CVD PROCESS
A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as e...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | HUNKS WILLIAM LI WEIMIN PETERS DAVID W BATTLE SCOTT L |
| description | A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2015251920A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2015251920A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2015251920A13</originalsourceid><addsrcrecordid>eNrjZFBz8wn1D_L0c1VwC3J1VQgJ9XMPDnH1U3D0cdF3DnNRCAjyd3YNDuZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhqZGpoaWRgaOhsbEqQIAUOIkcQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FLUORINE FREE TUNGSTEN ALD/CVD PROCESS</title><source>esp@cenet</source><creator>HUNKS WILLIAM ; LI WEIMIN ; PETERS DAVID W ; BATTLE SCOTT L</creator><creatorcontrib>HUNKS WILLIAM ; LI WEIMIN ; PETERS DAVID W ; BATTLE SCOTT L</creatorcontrib><description>A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.</description><language>eng</language><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ; ADHESIVES ; AMMONIA ; BASIC ELECTRIC ELEMENTS ; CABLES ; CHEMICAL PAINT OR INK REMOVERS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; COMPOUNDS THEREOF ; CONDUCTORS ; CORRECTING FLUIDS ; CYANOGEN ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; DYES ; ELECTRICITY ; FILLING PASTES ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INKS ; INORGANIC CHEMISTRY ; INSULATORS ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; ORGANIC CHEMISTRY ; PAINTS ; PASTES OR SOLIDS FOR COLOURING OR PRINTING ; POLISHES ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; USE OF MATERIALS THEREFOR ; WOODSTAINS</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150910&DB=EPODOC&CC=US&NR=2015251920A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150910&DB=EPODOC&CC=US&NR=2015251920A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HUNKS WILLIAM</creatorcontrib><creatorcontrib>LI WEIMIN</creatorcontrib><creatorcontrib>PETERS DAVID W</creatorcontrib><creatorcontrib>BATTLE SCOTT L</creatorcontrib><title>FLUORINE FREE TUNGSTEN ALD/CVD PROCESS</title><description>A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.</description><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</subject><subject>ADHESIVES</subject><subject>AMMONIA</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CHEMICAL PAINT OR INK REMOVERS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</subject><subject>COMPOUNDS THEREOF</subject><subject>CONDUCTORS</subject><subject>CORRECTING FLUIDS</subject><subject>CYANOGEN</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>DYES</subject><subject>ELECTRICITY</subject><subject>FILLING PASTES</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INKS</subject><subject>INORGANIC CHEMISTRY</subject><subject>INSULATORS</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>ORGANIC CHEMISTRY</subject><subject>PAINTS</subject><subject>PASTES OR SOLIDS FOR COLOURING OR PRINTING</subject><subject>POLISHES</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>USE OF MATERIALS THEREFOR</subject><subject>WOODSTAINS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBz8wn1D_L0c1VwC3J1VQgJ9XMPDnH1U3D0cdF3DnNRCAjyd3YNDuZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhqZGpoaWRgaOhsbEqQIAUOIkcQ</recordid><startdate>20150910</startdate><enddate>20150910</enddate><creator>HUNKS WILLIAM</creator><creator>LI WEIMIN</creator><creator>PETERS DAVID W</creator><creator>BATTLE SCOTT L</creator><scope>EVB</scope></search><sort><creationdate>20150910</creationdate><title>FLUORINE FREE TUNGSTEN ALD/CVD PROCESS</title><author>HUNKS WILLIAM ; LI WEIMIN ; PETERS DAVID W ; BATTLE SCOTT L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2015251920A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</topic><topic>ADHESIVES</topic><topic>AMMONIA</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CHEMICAL PAINT OR INK REMOVERS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>COMPOUNDS THEREOF</topic><topic>CONDUCTORS</topic><topic>CORRECTING FLUIDS</topic><topic>CYANOGEN</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>DYES</topic><topic>ELECTRICITY</topic><topic>FILLING PASTES</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INKS</topic><topic>INORGANIC CHEMISTRY</topic><topic>INSULATORS</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>ORGANIC CHEMISTRY</topic><topic>PAINTS</topic><topic>PASTES OR SOLIDS FOR COLOURING OR PRINTING</topic><topic>POLISHES</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>USE OF MATERIALS THEREFOR</topic><topic>WOODSTAINS</topic><toplevel>online_resources</toplevel><creatorcontrib>HUNKS WILLIAM</creatorcontrib><creatorcontrib>LI WEIMIN</creatorcontrib><creatorcontrib>PETERS DAVID W</creatorcontrib><creatorcontrib>BATTLE SCOTT L</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HUNKS WILLIAM</au><au>LI WEIMIN</au><au>PETERS DAVID W</au><au>BATTLE SCOTT L</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FLUORINE FREE TUNGSTEN ALD/CVD PROCESS</title><date>2015-09-10</date><risdate>2015</risdate><abstract>A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2015251920A1 |
| source | esp@cenet |
| subjects | ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ADHESIVES AMMONIA BASIC ELECTRIC ELEMENTS CABLES CHEMICAL PAINT OR INK REMOVERS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F COMPOUNDS THEREOF CONDUCTORS CORRECTING FLUIDS CYANOGEN DIFFUSION TREATMENT OF METALLIC MATERIAL DYES ELECTRICITY FILLING PASTES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INKS INORGANIC CHEMISTRY INSULATORS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC CHEMISTRY PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING POLISHES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION USE OF MATERIALS THEREFOR WOODSTAINS |
| title | FLUORINE FREE TUNGSTEN ALD/CVD PROCESS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T18%3A46%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HUNKS%20WILLIAM&rft.date=2015-09-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2015251920A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |