METHOD AND APPARATUS FOR MOS DEVICE WITH DOPED REGION

A semiconductor device is provided. The device may include a semiconductor layer; and a doped well disposed in the semiconductor layer and having a first conductivity type. The device may also include a drain region, a source region, and a body region, where the source and body regions may operate i...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LEE TSUNG-HSIUNG, LIN SHINNG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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