LATERAL DOUBLE-DIFFUSED METAL-OXIDE-SEMICONUDCTOR TRANSISTOR DEVICE AND LAYOUT PATTERN FOR LDMOS TRANSISTOR DEVICE

A LDMOS transistor device includes a substrate including a first insulating structure formed therein, a gate formed on the substrate and covering a portion of the first insulating structure, a drain region and a source region formed in the substrate at two respective sides of the gate, a base region...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHANG KAING, CHOU KUN-YI, HUANG BO-JUI, LIN AN-HUNG, LIU HSIAO-WEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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