LIGHT EMITTING DEVICE
The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | LEE KWANG CHIL KIM DONG HA PARK HAE JIN KIM JAE HUN YUN HWAN HUI KIM KYOUNG HOON |
| description | The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2015179878A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2015179878A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2015179878A13</originalsourceid><addsrcrecordid>eNrjZBD18XT3CFFw9fUMCfH0c1dwcQ3zdHblYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBoamhuaWFuYWjobGxKkCAA1FH9k</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LIGHT EMITTING DEVICE</title><source>esp@cenet</source><creator>LEE KWANG CHIL ; KIM DONG HA ; PARK HAE JIN ; KIM JAE HUN ; YUN HWAN HUI ; KIM KYOUNG HOON</creator><creatorcontrib>LEE KWANG CHIL ; KIM DONG HA ; PARK HAE JIN ; KIM JAE HUN ; YUN HWAN HUI ; KIM KYOUNG HOON</creatorcontrib><description>The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N(0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150625&DB=EPODOC&CC=US&NR=2015179878A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150625&DB=EPODOC&CC=US&NR=2015179878A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE KWANG CHIL</creatorcontrib><creatorcontrib>KIM DONG HA</creatorcontrib><creatorcontrib>PARK HAE JIN</creatorcontrib><creatorcontrib>KIM JAE HUN</creatorcontrib><creatorcontrib>YUN HWAN HUI</creatorcontrib><creatorcontrib>KIM KYOUNG HOON</creatorcontrib><title>LIGHT EMITTING DEVICE</title><description>The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N(0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBD18XT3CFFw9fUMCfH0c1dwcQ3zdHblYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBoamhuaWFuYWjobGxKkCAA1FH9k</recordid><startdate>20150625</startdate><enddate>20150625</enddate><creator>LEE KWANG CHIL</creator><creator>KIM DONG HA</creator><creator>PARK HAE JIN</creator><creator>KIM JAE HUN</creator><creator>YUN HWAN HUI</creator><creator>KIM KYOUNG HOON</creator><scope>EVB</scope></search><sort><creationdate>20150625</creationdate><title>LIGHT EMITTING DEVICE</title><author>LEE KWANG CHIL ; KIM DONG HA ; PARK HAE JIN ; KIM JAE HUN ; YUN HWAN HUI ; KIM KYOUNG HOON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2015179878A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE KWANG CHIL</creatorcontrib><creatorcontrib>KIM DONG HA</creatorcontrib><creatorcontrib>PARK HAE JIN</creatorcontrib><creatorcontrib>KIM JAE HUN</creatorcontrib><creatorcontrib>YUN HWAN HUI</creatorcontrib><creatorcontrib>KIM KYOUNG HOON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE KWANG CHIL</au><au>KIM DONG HA</au><au>PARK HAE JIN</au><au>KIM JAE HUN</au><au>YUN HWAN HUI</au><au>KIM KYOUNG HOON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LIGHT EMITTING DEVICE</title><date>2015-06-25</date><risdate>2015</risdate><abstract>The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N(0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2015179878A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | LIGHT EMITTING DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T12%3A46%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LEE%20KWANG%20CHIL&rft.date=2015-06-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2015179878A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |