IMAGE SENSOR WITH DOPED TRANSFER GATE

An image sensor is fabricated by forming transfer gates over a substrate layer. A transfer gate is disposed between a respective shared charge-to-voltage conversion region and a photodetector associated with the shared charge-to-voltage conversion region. The transfer gates of each shared charge-to-...

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Bibliographische Detailangaben

Hauptverfasser:	DOAN HUNG Q, STEVENS ERIC G
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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