NOVEL CONTACT STRUCTURE FOR A SEMICONDUCTOR DEVICE AND METHODS OF MAKING SAME

A device includes first and second spaced-apart active regions positioned in a semiconducting substrate, an isolation region positioned between and separating the first and second spaced-apart active regions, and a layer of gate insulation material positioned on the first active region. A first cond...

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Hauptverfasser:	JAKUBOWSKI FRANK, FAUL JUERGEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	JAKUBOWSKI FRANK FAUL JUERGEN
description	A device includes first and second spaced-apart active regions positioned in a semiconducting substrate, an isolation region positioned between and separating the first and second spaced-apart active regions, and a layer of gate insulation material positioned on the first active region. A first conductive line feature extends continuously from the first active region and across the isolation region to the second active region, wherein the first conductive line feature includes a first portion that is positioned directly above the layer of gate insulation material positioned on the first active region and a second portion that conductively contacts the second active region.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	NOVEL CONTACT STRUCTURE FOR A SEMICONDUCTOR DEVICE AND METHODS OF MAKING SAME
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