SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing ga...

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Hauptverfasser: NISHIMURA EIICHI, YAMASHITA FUMIKO, SHIMIZU AKITAKA, URAYAMA DAISUKE
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creator NISHIMURA EIICHI
YAMASHITA FUMIKO
SHIMIZU AKITAKA
URAYAMA DAISUKE
description An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2015132970A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2015132970A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2015132970A13</originalsourceid><addsrcrecordid>eNrjZLALDnUKDglyDHFVCAjyd3YNDvb0c1dwDAhwBIqFBis4-rkoYFXi6xri4e_Cw8CalphTnMoLpbkZlN1cQ5w9dFML8uNTiwsSk1PzUkviQ4ONDAxNDY2NLM0NHA2NiVMFAEWtK44</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><source>esp@cenet</source><creator>NISHIMURA EIICHI ; YAMASHITA FUMIKO ; SHIMIZU AKITAKA ; URAYAMA DAISUKE</creator><creatorcontrib>NISHIMURA EIICHI ; YAMASHITA FUMIKO ; SHIMIZU AKITAKA ; URAYAMA DAISUKE</creatorcontrib><description>An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150514&amp;DB=EPODOC&amp;CC=US&amp;NR=2015132970A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150514&amp;DB=EPODOC&amp;CC=US&amp;NR=2015132970A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NISHIMURA EIICHI</creatorcontrib><creatorcontrib>YAMASHITA FUMIKO</creatorcontrib><creatorcontrib>SHIMIZU AKITAKA</creatorcontrib><creatorcontrib>URAYAMA DAISUKE</creatorcontrib><title>SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><description>An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLALDnUKDglyDHFVCAjyd3YNDvb0c1dwDAhwBIqFBis4-rkoYFXi6xri4e_Cw8CalphTnMoLpbkZlN1cQ5w9dFML8uNTiwsSk1PzUkviQ4ONDAxNDY2NLM0NHA2NiVMFAEWtK44</recordid><startdate>20150514</startdate><enddate>20150514</enddate><creator>NISHIMURA EIICHI</creator><creator>YAMASHITA FUMIKO</creator><creator>SHIMIZU AKITAKA</creator><creator>URAYAMA DAISUKE</creator><scope>EVB</scope></search><sort><creationdate>20150514</creationdate><title>SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><author>NISHIMURA EIICHI ; YAMASHITA FUMIKO ; SHIMIZU AKITAKA ; URAYAMA DAISUKE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2015132970A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NISHIMURA EIICHI</creatorcontrib><creatorcontrib>YAMASHITA FUMIKO</creatorcontrib><creatorcontrib>SHIMIZU AKITAKA</creatorcontrib><creatorcontrib>URAYAMA DAISUKE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NISHIMURA EIICHI</au><au>YAMASHITA FUMIKO</au><au>SHIMIZU AKITAKA</au><au>URAYAMA DAISUKE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><date>2015-05-14</date><risdate>2015</risdate><abstract>An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T12%3A35%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NISHIMURA%20EIICHI&rft.date=2015-05-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2015132970A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true