Semiconductor Devices Including Buried Channels

A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an active region defined by a device isolation layer formed in a cell region, a transistor including a buried gate in the active region, a metal contact formed on the active region positioned...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NAM SEOK-WOO, LIM HAN-JIN, YOO WON-SEOK
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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