TWO-STEP METHOD FOR JOINING A SEMICONDUCTOR TO A SUBSTRATE WITH CONNECTING MATERIAL BASED ON SILVER
The invention relates to a method for joining a semiconductor (20) to a substrate (10), comprising the following steps: *applying a first paste layer (1) of a sintering paste to the substrate; *heating and compressing the first paste layer to form a first sintered layer; *applying a second paste lay...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!