IV-VI AND III-V QUANTUM DOT STRUCTURES IN A V-VI MATRIX

A thermoelectric material and methods of manufacturing thereof are disclosed. In general, the thermoelectric material comprises a Group V-VI host, or matrix, material and Group III-V or Group IV-VI nanoinclusions within the Group V-VI host material. By incorporating the Group III-V or Group IV-VI na...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	CANTU PABLO, GRAY ALLEN L, CAYLOR JAMES CHRISTOPHER, CHARLES WILLIAM O, WELLENIUS IAN PATRICK
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	CANTU PABLO GRAY ALLEN L CAYLOR JAMES CHRISTOPHER CHARLES WILLIAM O WELLENIUS IAN PATRICK
description	A thermoelectric material and methods of manufacturing thereof are disclosed. In general, the thermoelectric material comprises a Group V-VI host, or matrix, material and Group III-V or Group IV-VI nanoinclusions within the Group V-VI host material. By incorporating the Group III-V or Group IV-VI nanoinclusions into the Group V-VI host material, the performance of the thermoelectric material can be improved.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2015107640A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2015107640A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2015107640A13</originalsourceid><addsrcrecordid>eNrjZDD3DNMN81Rw9HNR8PT01A1TCAx19AsJ9VVw8Q9RCA4JCnUOCQ1yDVbw9FNwVAAr9XUMCfKM4GFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGpoYG5mYmBo6GxsSpAgCzuCjH</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>IV-VI AND III-V QUANTUM DOT STRUCTURES IN A V-VI MATRIX</title><source>esp@cenet</source><creator>CANTU PABLO ; GRAY ALLEN L ; CAYLOR JAMES CHRISTOPHER ; CHARLES WILLIAM O ; WELLENIUS IAN PATRICK</creator><creatorcontrib>CANTU PABLO ; GRAY ALLEN L ; CAYLOR JAMES CHRISTOPHER ; CHARLES WILLIAM O ; WELLENIUS IAN PATRICK</creatorcontrib><description>A thermoelectric material and methods of manufacturing thereof are disclosed. In general, the thermoelectric material comprises a Group V-VI host, or matrix, material and Group III-V or Group IV-VI nanoinclusions within the Group V-VI host material. By incorporating the Group III-V or Group IV-VI nanoinclusions into the Group V-VI host material, the performance of the thermoelectric material can be improved.</description><language>eng</language><subject>ELECTRICITY</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150423&DB=EPODOC&CC=US&NR=2015107640A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150423&DB=EPODOC&CC=US&NR=2015107640A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CANTU PABLO</creatorcontrib><creatorcontrib>GRAY ALLEN L</creatorcontrib><creatorcontrib>CAYLOR JAMES CHRISTOPHER</creatorcontrib><creatorcontrib>CHARLES WILLIAM O</creatorcontrib><creatorcontrib>WELLENIUS IAN PATRICK</creatorcontrib><title>IV-VI AND III-V QUANTUM DOT STRUCTURES IN A V-VI MATRIX</title><description>A thermoelectric material and methods of manufacturing thereof are disclosed. In general, the thermoelectric material comprises a Group V-VI host, or matrix, material and Group III-V or Group IV-VI nanoinclusions within the Group V-VI host material. By incorporating the Group III-V or Group IV-VI nanoinclusions into the Group V-VI host material, the performance of the thermoelectric material can be improved.</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD3DNMN81Rw9HNR8PT01A1TCAx19AsJ9VVw8Q9RCA4JCnUOCQ1yDVbw9FNwVAAr9XUMCfKM4GFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGpoYG5mYmBo6GxsSpAgCzuCjH</recordid><startdate>20150423</startdate><enddate>20150423</enddate><creator>CANTU PABLO</creator><creator>GRAY ALLEN L</creator><creator>CAYLOR JAMES CHRISTOPHER</creator><creator>CHARLES WILLIAM O</creator><creator>WELLENIUS IAN PATRICK</creator><scope>EVB</scope></search><sort><creationdate>20150423</creationdate><title>IV-VI AND III-V QUANTUM DOT STRUCTURES IN A V-VI MATRIX</title><author>CANTU PABLO ; GRAY ALLEN L ; CAYLOR JAMES CHRISTOPHER ; CHARLES WILLIAM O ; WELLENIUS IAN PATRICK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2015107640A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>CANTU PABLO</creatorcontrib><creatorcontrib>GRAY ALLEN L</creatorcontrib><creatorcontrib>CAYLOR JAMES CHRISTOPHER</creatorcontrib><creatorcontrib>CHARLES WILLIAM O</creatorcontrib><creatorcontrib>WELLENIUS IAN PATRICK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CANTU PABLO</au><au>GRAY ALLEN L</au><au>CAYLOR JAMES CHRISTOPHER</au><au>CHARLES WILLIAM O</au><au>WELLENIUS IAN PATRICK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>IV-VI AND III-V QUANTUM DOT STRUCTURES IN A V-VI MATRIX</title><date>2015-04-23</date><risdate>2015</risdate><abstract>A thermoelectric material and methods of manufacturing thereof are disclosed. In general, the thermoelectric material comprises a Group V-VI host, or matrix, material and Group III-V or Group IV-VI nanoinclusions within the Group V-VI host material. By incorporating the Group III-V or Group IV-VI nanoinclusions into the Group V-VI host material, the performance of the thermoelectric material can be improved.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US2015107640A1
source	esp@cenet
subjects	ELECTRICITY
title	IV-VI AND III-V QUANTUM DOT STRUCTURES IN A V-VI MATRIX
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T03%3A31%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CANTU%20PABLO&rft.date=2015-04-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2015107640A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true