METHOD OF MATCHING TWO OR MORE PLASMA REACTORS

METHOD OF MATCHING TWO OR MORE PLASMA REACTORS

Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset α in tilt ang...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KHAN ANISUL H, SARAF GAURAV, CHANG WEN TEH, ABOOAMERI FARID, HERSCH BRADLEY SCOTT, YANG XIAWAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator KHAN ANISUL H
SARAF GAURAV
CHANG WEN TEH
ABOOAMERI FARID
HERSCH BRADLEY SCOTT
YANG XIAWAN
description Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset α in tilt angle α between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset α.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2015096959A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2015096959A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2015096959A13</originalsourceid><addsrcrecordid>eNrjZNDzdQ3x8HdR8HdT8HUMcfbw9HNXCAn3V_APUvD1D3JVCPBxDPZ1VAhydXQO8Q8K5mFgTUvMKU7lhdLcDMpurkBtuqkF-fGpxQWJyal5qSXxocFGBoamBpZmlqaWjobGxKkCAGMCJpU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF MATCHING TWO OR MORE PLASMA REACTORS</title><source>esp@cenet</source><creator>KHAN ANISUL H ; SARAF GAURAV ; CHANG WEN TEH ; ABOOAMERI FARID ; HERSCH BRADLEY SCOTT ; YANG XIAWAN</creator><creatorcontrib>KHAN ANISUL H ; SARAF GAURAV ; CHANG WEN TEH ; ABOOAMERI FARID ; HERSCH BRADLEY SCOTT ; YANG XIAWAN</creatorcontrib><description>Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset α in tilt angle α between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset α.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150409&amp;DB=EPODOC&amp;CC=US&amp;NR=2015096959A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150409&amp;DB=EPODOC&amp;CC=US&amp;NR=2015096959A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KHAN ANISUL H</creatorcontrib><creatorcontrib>SARAF GAURAV</creatorcontrib><creatorcontrib>CHANG WEN TEH</creatorcontrib><creatorcontrib>ABOOAMERI FARID</creatorcontrib><creatorcontrib>HERSCH BRADLEY SCOTT</creatorcontrib><creatorcontrib>YANG XIAWAN</creatorcontrib><title>METHOD OF MATCHING TWO OR MORE PLASMA REACTORS</title><description>Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset α in tilt angle α between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset α.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDzdQ3x8HdR8HdT8HUMcfbw9HNXCAn3V_APUvD1D3JVCPBxDPZ1VAhydXQO8Q8K5mFgTUvMKU7lhdLcDMpurkBtuqkF-fGpxQWJyal5qSXxocFGBoamBpZmlqaWjobGxKkCAGMCJpU</recordid><startdate>20150409</startdate><enddate>20150409</enddate><creator>KHAN ANISUL H</creator><creator>SARAF GAURAV</creator><creator>CHANG WEN TEH</creator><creator>ABOOAMERI FARID</creator><creator>HERSCH BRADLEY SCOTT</creator><creator>YANG XIAWAN</creator><scope>EVB</scope></search><sort><creationdate>20150409</creationdate><title>METHOD OF MATCHING TWO OR MORE PLASMA REACTORS</title><author>KHAN ANISUL H ; SARAF GAURAV ; CHANG WEN TEH ; ABOOAMERI FARID ; HERSCH BRADLEY SCOTT ; YANG XIAWAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2015096959A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>KHAN ANISUL H</creatorcontrib><creatorcontrib>SARAF GAURAV</creatorcontrib><creatorcontrib>CHANG WEN TEH</creatorcontrib><creatorcontrib>ABOOAMERI FARID</creatorcontrib><creatorcontrib>HERSCH BRADLEY SCOTT</creatorcontrib><creatorcontrib>YANG XIAWAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KHAN ANISUL H</au><au>SARAF GAURAV</au><au>CHANG WEN TEH</au><au>ABOOAMERI FARID</au><au>HERSCH BRADLEY SCOTT</au><au>YANG XIAWAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF MATCHING TWO OR MORE PLASMA REACTORS</title><date>2015-04-09</date><risdate>2015</risdate><abstract>Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset α in tilt angle α between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset α.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2015096959A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
title METHOD OF MATCHING TWO OR MORE PLASMA REACTORS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T11%3A57%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KHAN%20ANISUL%20H&rft.date=2015-04-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2015096959A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true