Multiple-Gate Semiconductor Device and Method

Multiple-Gate Semiconductor Device and Method

A system and method for manufacturing multiple-gate semiconductor devices is disclosed. An embodiment comprises multiple fins, wherein intra-fin isolation regions extend into the substrate less than inter-fin isolation regions. Regions of the multiple fins not covered by the gate stack are removed a...

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Hauptverfasser: WENG LI-WEN, CHAN CHIEN-TAI, LEE TUNG YING, LIN HSIENIN, LIN DA-WEN
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator WENG LI-WEN
CHAN CHIEN-TAI
LEE TUNG YING
LIN HSIENIN
LIN DA-WEN
description A system and method for manufacturing multiple-gate semiconductor devices is disclosed. An embodiment comprises multiple fins, wherein intra-fin isolation regions extend into the substrate less than inter-fin isolation regions. Regions of the multiple fins not covered by the gate stack are removed and source/drain regions are formed from the substrate so as to avoid the formation of voids between the fins in the source/drain region.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Multiple-Gate Semiconductor Device and Method
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