COMBINATION GRINDING AFTER LASER (GAL) AND LASER ON-OFF FUNCTION TO INCREASE DIE STRENGTH

Consistent with an example embodiment, there is a method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side. The method comprises pre-grinding the backside of a wafer substrate to a thickness. The front-side of the wafer is...

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Hauptverfasser: BUENNING HARTMUT, ALBERMANN GUIDO, LAPKE MARTIN, ROHLEDER THOMAS, MOELLER SASCHA
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creator BUENNING HARTMUT
ALBERMANN GUIDO
LAPKE MARTIN
ROHLEDER THOMAS
MOELLER SASCHA
description Consistent with an example embodiment, there is a method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side. The method comprises pre-grinding the backside of a wafer substrate to a thickness. The front-side of the wafer is mounted onto a protective foil. A laser is applied to the backside of the wafer, at first focus depth to define a secondary modification zone in saw lanes. To the backside of the wafer, a second laser process is applied, at a second focus depth shallower than that of the first focus depth, in the saw lanes to define a main modification zone, the secondary modification defined at a pre-determined location within active device boundaries, the active device boundaries defining an active device area. The backside of the wafer is ground down to a depth so as to remove the main modification zone. The IC device die are separated from one another by stretching the protective foil.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title COMBINATION GRINDING AFTER LASER (GAL) AND LASER ON-OFF FUNCTION TO INCREASE DIE STRENGTH
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