LDMOSFET HAVING A BRIDGE REGION FORMED BETWEEN TWO GATE ELECTRODES

A split gate power transistor includes a laterally configured power MOSFET including a doped silicon substrate, a stepped gate oxide layer formed on a surface of the substrate, and a split polysilicon layer formed over the stepped gate oxide layer. The stepped gate oxide layer includes a first gate...

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Bibliographische Detailangaben

Hauptverfasser:	GILES FREDERICK P, MCGREGOR JOEL M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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