SEMICONDUCTOR INTERCONNECT STRUCTURE HAVING A GRAPHENE-BASED BARRIER METAL LAYER

An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by utilizing a graphene-based barrier metal layer to block oxygen intrusion from a dielectric layer into the interconnect structure and block copper diffusion from the interco...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHOI SAMUEL S.S, LI XUESONG, YAO SHAONING, BAO JUNJING
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!