SILICON-CONTROLLED RECTIFICATION DEVICE WITH HIGH EFFICIENCY

SILICON-CONTROLLED RECTIFICATION DEVICE WITH HIGH EFFICIENCY

A silicon-controlled rectification device with high efficiency is disclosed, which comprises a P-type region surrounding an N-type region. A first P-type heavily doped area is arranged in the N-type region and connected with a high-voltage terminal. A plurality of second N-type heavily doped areas i...

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Hauptverfasser: PENG JAMES JENG-JIE, CHEN TUNG-YANG, WU WOEI-LIN, JIANG RYAN HSININ
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator PENG JAMES JENG-JIE
CHEN TUNG-YANG
WU WOEI-LIN
JIANG RYAN HSININ
description A silicon-controlled rectification device with high efficiency is disclosed, which comprises a P-type region surrounding an N-type region. A first P-type heavily doped area is arranged in the N-type region and connected with a high-voltage terminal. A plurality of second N-type heavily doped areas is arranged in the N-type region. A plurality of second P-type heavily doped areas is closer to the second N-type heavily doped areas than the first N-type heavily doped area and arranged in the P-type region. At least one third N-type heavily doped area is arranged in the P-type region and connected with a low-voltage terminal. Alternatively or in combination, the second N-type heavily doped areas and the second P-type heavily doped areas are respectively arranged in the P-type region and the N-type region.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SILICON-CONTROLLED RECTIFICATION DEVICE WITH HIGH EFFICIENCY
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