VOLTAGE CONTRAST INSPECTION OF DEEP TRENCH ISOLATION

A method including forming a first test structure and a second test structure in electrical contact with an inner buried plate and an outer buried plate, respectively, where the first and second test structures each comprise a deep trench filled with a conductive material, and measuring the voltage...

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Hauptverfasser:	ARNOLD NORBERT, LIU JIN, PATTERSON OLIVER D, MESSENGER BRIAN W
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	ARNOLD NORBERT LIU JIN PATTERSON OLIVER D MESSENGER BRIAN W
description	A method including forming a first test structure and a second test structure in electrical contact with an inner buried plate and an outer buried plate, respectively, where the first and second test structures each comprise a deep trench filled with a conductive material, and measuring the voltage of the inner buried plate and the outer buried plate immediately after the formation of a deep trench isolation structure, where the inner buried plate and the outer buried plate are positioned on opposite sides of the deep trench isolation structure.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	VOLTAGE CONTRAST INSPECTION OF DEEP TRENCH ISOLATION
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