REDUCED SPACER THICKNESS IN SEMICONDUCTOR DEVICE FABRICATION

In aspects of the present disclosure, a reliable encapsulation of a gate dielectric is provided at very early stages during fabrication. In other aspects, a semiconductor device is provided wherein a reliable encapsulation of a gate dielectric material is maintained, the reliable encapsulation being...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JAKUBOWSKI FRANK, FAUL JUERGEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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