Compositions and Methods For CMP of Silicon Oxide, Silicon Nitride, and Polysilicon Materials
The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and p...
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| creator | WARD WILLIAM MATEJA DANIEL DINEGA DIMITRY MOEGGENBORG KEVIN |
| description | The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer. |
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The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.</description><language>eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; POLISHING ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SEMICONDUCTOR DEVICES ; SKI WAXES ; TRANSPORTING</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150122&DB=EPODOC&CC=US&NR=2015024595A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150122&DB=EPODOC&CC=US&NR=2015024595A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WARD WILLIAM</creatorcontrib><creatorcontrib>MATEJA DANIEL</creatorcontrib><creatorcontrib>DINEGA DIMITRY</creatorcontrib><creatorcontrib>MOEGGENBORG KEVIN</creatorcontrib><title>Compositions and Methods For CMP of Silicon Oxide, Silicon Nitride, and Polysilicon Materials</title><description>The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. 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The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>POLISHING</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SKI WAXES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIh1zs8tyC_OLMnMzytWSMxLUfBNLcnITylWcMsvUnD2DVDIT1MIzszJTM7PU_CvyExJ1YFz_TJLisACIG0B-TmVxVAJ38SS1KLMxJxiHgbWNCCVyguluRmU3VxDnD10Uwvy41OLCxKTU_NSS-JDg40MDE0NjExMLU0dDY2JUwUAJiA70A</recordid><startdate>20150122</startdate><enddate>20150122</enddate><creator>WARD WILLIAM</creator><creator>MATEJA DANIEL</creator><creator>DINEGA DIMITRY</creator><creator>MOEGGENBORG KEVIN</creator><scope>EVB</scope></search><sort><creationdate>20150122</creationdate><title>Compositions and Methods For CMP of Silicon Oxide, Silicon Nitride, and Polysilicon Materials</title><author>WARD WILLIAM ; MATEJA DANIEL ; DINEGA DIMITRY ; MOEGGENBORG KEVIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2015024595A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>POLISHING</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SKI WAXES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>WARD WILLIAM</creatorcontrib><creatorcontrib>MATEJA DANIEL</creatorcontrib><creatorcontrib>DINEGA DIMITRY</creatorcontrib><creatorcontrib>MOEGGENBORG KEVIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WARD WILLIAM</au><au>MATEJA DANIEL</au><au>DINEGA DIMITRY</au><au>MOEGGENBORG KEVIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Compositions and Methods For CMP of Silicon Oxide, Silicon Nitride, and Polysilicon Materials</title><date>2015-01-22</date><risdate>2015</risdate><abstract>The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING |
| title | Compositions and Methods For CMP of Silicon Oxide, Silicon Nitride, and Polysilicon Materials |
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