APPARATUS AND METHOD FOR CONTROLLING HEATING OF BASE WITHIN CHEMICAL VAPOUR DEPOSITION CHAMBER

Provided are an apparatus and a method for controlling the heating of the base within a chemical vapour deposition chamber, which apparatus is applicable to an MOCVD reaction chamber. The apparatus comprises a heater located within a chamber; a tray located near the heater within the chamber and spa...

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Hauptverfasser: LIU YINGBIN, LEE STEVEN TIANXIAO, TIAN BAOXIA, GUO QUANYONG
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Sprache:eng
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creator LIU YINGBIN
LEE STEVEN TIANXIAO
TIAN BAOXIA
GUO QUANYONG
description Provided are an apparatus and a method for controlling the heating of the base within a chemical vapour deposition chamber, which apparatus is applicable to an MOCVD reaction chamber. The apparatus comprises a heater located within a chamber; a tray located near the heater within the chamber and spaced apart from the heater and used for carrying the base; a first temperature control unit coupled with a surface of the tray for carrying the base and used for measuring the temperature of the tray surface and outputting a first control signal as a function of a set temperature and the temperature of the tray surface; and a second temperature control unit connected to the first temperature control unit and used for measuring the temperature of the middle of the area between the tray and the heater, and also for outputting a second control signal as a function of the first control signal and the temperature of the middle, with the heater being coupled with the second temperature control unit to heat according to the second control signal. Further provided is a method for controlling the heating of the base within a chemical vapour deposition chamber. A steady base temperature can be obtained via the apparatus.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2015024330A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2015024330A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2015024330A13</originalsourceid><addsrcrecordid>eNqNyk0KwjAQQOFuXIh6hwHXQn_0ANN0agJtJiQT3VmKxJVood4fKXgAV9_ivXV2Q-fQo8QAaBvoSTQ30LIHxVY8d52xZ9CEssgt1BgIrka0saA09UZhBxd0HD005DgYMbwk7Gvy22z1GJ9z2v3cZPuWROlDmt5Dmqfxnl7pM8RQ5sUpL49VlWNR_Xd9AdRaM54</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>APPARATUS AND METHOD FOR CONTROLLING HEATING OF BASE WITHIN CHEMICAL VAPOUR DEPOSITION CHAMBER</title><source>esp@cenet</source><creator>LIU YINGBIN ; LEE STEVEN TIANXIAO ; TIAN BAOXIA ; GUO QUANYONG</creator><creatorcontrib>LIU YINGBIN ; LEE STEVEN TIANXIAO ; TIAN BAOXIA ; GUO QUANYONG</creatorcontrib><description>Provided are an apparatus and a method for controlling the heating of the base within a chemical vapour deposition chamber, which apparatus is applicable to an MOCVD reaction chamber. The apparatus comprises a heater located within a chamber; a tray located near the heater within the chamber and spaced apart from the heater and used for carrying the base; a first temperature control unit coupled with a surface of the tray for carrying the base and used for measuring the temperature of the tray surface and outputting a first control signal as a function of a set temperature and the temperature of the tray surface; and a second temperature control unit connected to the first temperature control unit and used for measuring the temperature of the middle of the area between the tray and the heater, and also for outputting a second control signal as a function of the first control signal and the temperature of the middle, with the heater being coupled with the second temperature control unit to heat according to the second control signal. Further provided is a method for controlling the heating of the base within a chemical vapour deposition chamber. A steady base temperature can be obtained via the apparatus.</description><language>eng</language><subject>BLASTING ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; FURNACES ; HEATING ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; KILNS ; LIGHTING ; MECHANICAL ENGINEERING ; METALLURGY ; OVENS ; RETORTS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; WEAPONS</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150122&amp;DB=EPODOC&amp;CC=US&amp;NR=2015024330A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150122&amp;DB=EPODOC&amp;CC=US&amp;NR=2015024330A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIU YINGBIN</creatorcontrib><creatorcontrib>LEE STEVEN TIANXIAO</creatorcontrib><creatorcontrib>TIAN BAOXIA</creatorcontrib><creatorcontrib>GUO QUANYONG</creatorcontrib><title>APPARATUS AND METHOD FOR CONTROLLING HEATING OF BASE WITHIN CHEMICAL VAPOUR DEPOSITION CHAMBER</title><description>Provided are an apparatus and a method for controlling the heating of the base within a chemical vapour deposition chamber, which apparatus is applicable to an MOCVD reaction chamber. The apparatus comprises a heater located within a chamber; a tray located near the heater within the chamber and spaced apart from the heater and used for carrying the base; a first temperature control unit coupled with a surface of the tray for carrying the base and used for measuring the temperature of the tray surface and outputting a first control signal as a function of a set temperature and the temperature of the tray surface; and a second temperature control unit connected to the first temperature control unit and used for measuring the temperature of the middle of the area between the tray and the heater, and also for outputting a second control signal as a function of the first control signal and the temperature of the middle, with the heater being coupled with the second temperature control unit to heat according to the second control signal. Further provided is a method for controlling the heating of the base within a chemical vapour deposition chamber. A steady base temperature can be obtained via the apparatus.</description><subject>BLASTING</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>FURNACES</subject><subject>HEATING</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>KILNS</subject><subject>LIGHTING</subject><subject>MECHANICAL ENGINEERING</subject><subject>METALLURGY</subject><subject>OVENS</subject><subject>RETORTS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>WEAPONS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyk0KwjAQQOFuXIh6hwHXQn_0ANN0agJtJiQT3VmKxJVood4fKXgAV9_ivXV2Q-fQo8QAaBvoSTQ30LIHxVY8d52xZ9CEssgt1BgIrka0saA09UZhBxd0HD005DgYMbwk7Gvy22z1GJ9z2v3cZPuWROlDmt5Dmqfxnl7pM8RQ5sUpL49VlWNR_Xd9AdRaM54</recordid><startdate>20150122</startdate><enddate>20150122</enddate><creator>LIU YINGBIN</creator><creator>LEE STEVEN TIANXIAO</creator><creator>TIAN BAOXIA</creator><creator>GUO QUANYONG</creator><scope>EVB</scope></search><sort><creationdate>20150122</creationdate><title>APPARATUS AND METHOD FOR CONTROLLING HEATING OF BASE WITHIN CHEMICAL VAPOUR DEPOSITION CHAMBER</title><author>LIU YINGBIN ; LEE STEVEN TIANXIAO ; TIAN BAOXIA ; GUO QUANYONG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2015024330A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BLASTING</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>FURNACES</topic><topic>HEATING</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>KILNS</topic><topic>LIGHTING</topic><topic>MECHANICAL ENGINEERING</topic><topic>METALLURGY</topic><topic>OVENS</topic><topic>RETORTS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>WEAPONS</topic><toplevel>online_resources</toplevel><creatorcontrib>LIU YINGBIN</creatorcontrib><creatorcontrib>LEE STEVEN TIANXIAO</creatorcontrib><creatorcontrib>TIAN BAOXIA</creatorcontrib><creatorcontrib>GUO QUANYONG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIU YINGBIN</au><au>LEE STEVEN TIANXIAO</au><au>TIAN BAOXIA</au><au>GUO QUANYONG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS AND METHOD FOR CONTROLLING HEATING OF BASE WITHIN CHEMICAL VAPOUR DEPOSITION CHAMBER</title><date>2015-01-22</date><risdate>2015</risdate><abstract>Provided are an apparatus and a method for controlling the heating of the base within a chemical vapour deposition chamber, which apparatus is applicable to an MOCVD reaction chamber. The apparatus comprises a heater located within a chamber; a tray located near the heater within the chamber and spaced apart from the heater and used for carrying the base; a first temperature control unit coupled with a surface of the tray for carrying the base and used for measuring the temperature of the tray surface and outputting a first control signal as a function of a set temperature and the temperature of the tray surface; and a second temperature control unit connected to the first temperature control unit and used for measuring the temperature of the middle of the area between the tray and the heater, and also for outputting a second control signal as a function of the first control signal and the temperature of the middle, with the heater being coupled with the second temperature control unit to heat according to the second control signal. Further provided is a method for controlling the heating of the base within a chemical vapour deposition chamber. A steady base temperature can be obtained via the apparatus.</abstract><oa>free_for_read</oa></addata></record>
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source esp@cenet
subjects BLASTING
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE
DIFFUSION TREATMENT OF METALLIC MATERIAL
FURNACES
HEATING
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
KILNS
LIGHTING
MECHANICAL ENGINEERING
METALLURGY
OVENS
RETORTS
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
WEAPONS
title APPARATUS AND METHOD FOR CONTROLLING HEATING OF BASE WITHIN CHEMICAL VAPOUR DEPOSITION CHAMBER
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T21%3A00%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LIU%20YINGBIN&rft.date=2015-01-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2015024330A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true