METHOD FOR MANUFACTURING A PHOTOVOLTAIC MODULE WITH TWO ETCHING STEPS P1 AND P3 AND CORRESPONDING PHOTOVOLTAIC MODULE

METHOD FOR MANUFACTURING A PHOTOVOLTAIC MODULE WITH TWO ETCHING STEPS P1 AND P3 AND CORRESPONDING PHOTOVOLTAIC MODULE

The invention relates to a method for manufacturing a photovoltaic module comprising plurality of solar cells in a thin-layer structure, in which the following are formed consecutively in the structure: an electrode on the rear surface (41), a photovoltaic layer (43) obtained by depositing component...

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Hauptverfasser: AMTABLIAN SÉVAK, KARST NICOLAS, PERRAUD SIMON
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator AMTABLIAN SÉVAK
KARST NICOLAS
PERRAUD SIMON
description The invention relates to a method for manufacturing a photovoltaic module comprising plurality of solar cells in a thin-layer structure, in which the following are formed consecutively in the structure: an electrode on the rear surface (41), a photovoltaic layer (43) obtained by depositing components including metal precursors and at least one element taken from Se and S and by annealing such as to convert said components into a semiconductor material, and another semiconductor layer (44) in order to create a pn junction with the photovoltaic layer (43); characterised in that the metal precursors form, on the electrode on the rear surface (41), a continuous layer, while said at least one element forms a layer having at least one break making it possible, at the end of the annealing step, to leave an area (430) of the layer of metal precursors in the metal state at said break.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2015007866A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2015007866A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2015007866A13</originalsourceid><addsrcrecordid>eNqNzLEKwjAUQNEsDqL-wwNnIbXYuoYkNYU2LyQvdixF4iRaqP6_VBwdnO5yuEv2ajUZVFChh1bYWAlJ0df2BAKcQcIzNiRqCS2q2GjoajJAHYImaWYWSLsALgNhFbj8E4ne6-DQqln82KzZ4jrcprT5dsW21TzcpfHRp2kcLumenn0Me54dOC-PRSGy_D_1BtOaOiU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR MANUFACTURING A PHOTOVOLTAIC MODULE WITH TWO ETCHING STEPS P1 AND P3 AND CORRESPONDING PHOTOVOLTAIC MODULE</title><source>esp@cenet</source><creator>AMTABLIAN SÉVAK ; KARST NICOLAS ; PERRAUD SIMON</creator><creatorcontrib>AMTABLIAN SÉVAK ; KARST NICOLAS ; PERRAUD SIMON</creatorcontrib><description>The invention relates to a method for manufacturing a photovoltaic module comprising plurality of solar cells in a thin-layer structure, in which the following are formed consecutively in the structure: an electrode on the rear surface (41), a photovoltaic layer (43) obtained by depositing components including metal precursors and at least one element taken from Se and S and by annealing such as to convert said components into a semiconductor material, and another semiconductor layer (44) in order to create a pn junction with the photovoltaic layer (43); characterised in that the metal precursors form, on the electrode on the rear surface (41), a continuous layer, while said at least one element forms a layer having at least one break making it possible, at the end of the annealing step, to leave an area (430) of the layer of metal precursors in the metal state at said break.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150108&amp;DB=EPODOC&amp;CC=US&amp;NR=2015007866A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150108&amp;DB=EPODOC&amp;CC=US&amp;NR=2015007866A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AMTABLIAN SÉVAK</creatorcontrib><creatorcontrib>KARST NICOLAS</creatorcontrib><creatorcontrib>PERRAUD SIMON</creatorcontrib><title>METHOD FOR MANUFACTURING A PHOTOVOLTAIC MODULE WITH TWO ETCHING STEPS P1 AND P3 AND CORRESPONDING PHOTOVOLTAIC MODULE</title><description>The invention relates to a method for manufacturing a photovoltaic module comprising plurality of solar cells in a thin-layer structure, in which the following are formed consecutively in the structure: an electrode on the rear surface (41), a photovoltaic layer (43) obtained by depositing components including metal precursors and at least one element taken from Se and S and by annealing such as to convert said components into a semiconductor material, and another semiconductor layer (44) in order to create a pn junction with the photovoltaic layer (43); characterised in that the metal precursors form, on the electrode on the rear surface (41), a continuous layer, while said at least one element forms a layer having at least one break making it possible, at the end of the annealing step, to leave an area (430) of the layer of metal precursors in the metal state at said break.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzLEKwjAUQNEsDqL-wwNnIbXYuoYkNYU2LyQvdixF4iRaqP6_VBwdnO5yuEv2ajUZVFChh1bYWAlJ0df2BAKcQcIzNiRqCS2q2GjoajJAHYImaWYWSLsALgNhFbj8E4ne6-DQqln82KzZ4jrcprT5dsW21TzcpfHRp2kcLumenn0Me54dOC-PRSGy_D_1BtOaOiU</recordid><startdate>20150108</startdate><enddate>20150108</enddate><creator>AMTABLIAN SÉVAK</creator><creator>KARST NICOLAS</creator><creator>PERRAUD SIMON</creator><scope>EVB</scope></search><sort><creationdate>20150108</creationdate><title>METHOD FOR MANUFACTURING A PHOTOVOLTAIC MODULE WITH TWO ETCHING STEPS P1 AND P3 AND CORRESPONDING PHOTOVOLTAIC MODULE</title><author>AMTABLIAN SÉVAK ; KARST NICOLAS ; PERRAUD SIMON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2015007866A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>AMTABLIAN SÉVAK</creatorcontrib><creatorcontrib>KARST NICOLAS</creatorcontrib><creatorcontrib>PERRAUD SIMON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AMTABLIAN SÉVAK</au><au>KARST NICOLAS</au><au>PERRAUD SIMON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MANUFACTURING A PHOTOVOLTAIC MODULE WITH TWO ETCHING STEPS P1 AND P3 AND CORRESPONDING PHOTOVOLTAIC MODULE</title><date>2015-01-08</date><risdate>2015</risdate><abstract>The invention relates to a method for manufacturing a photovoltaic module comprising plurality of solar cells in a thin-layer structure, in which the following are formed consecutively in the structure: an electrode on the rear surface (41), a photovoltaic layer (43) obtained by depositing components including metal precursors and at least one element taken from Se and S and by annealing such as to convert said components into a semiconductor material, and another semiconductor layer (44) in order to create a pn junction with the photovoltaic layer (43); characterised in that the metal precursors form, on the electrode on the rear surface (41), a continuous layer, while said at least one element forms a layer having at least one break making it possible, at the end of the annealing step, to leave an area (430) of the layer of metal precursors in the metal state at said break.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR MANUFACTURING A PHOTOVOLTAIC MODULE WITH TWO ETCHING STEPS P1 AND P3 AND CORRESPONDING PHOTOVOLTAIC MODULE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T14%3A24%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=AMTABLIAN%20S%C3%89VAK&rft.date=2015-01-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2015007866A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true