METHOD OF DEPOSITING COPPER USING PHYSICAL VAPOR DEPOSITION

METHOD OF DEPOSITING COPPER USING PHYSICAL VAPOR DEPOSITION

The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50.degree. C. or less, with the deposition tak...

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Hauptverfasser: ROBIE STEPHEN B, ROMERO JEREMIAS D, YU WEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ROBIE STEPHEN B
ROMERO JEREMIAS D
YU WEN
description The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50.degree. C. or less, with the deposition taking place at a power level of 300 W or less.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF DEPOSITING COPPER USING PHYSICAL VAPOR DEPOSITION
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